In order to investigate the photoluminescence (PL) properties of V2O5 films, amorphous and crystalline filmswere prepared by using RF sputtering system, and the PL spectra of the films were measured at the temperatures rangingfrom 300 K to 10 K. In the amorphous V2O5 film grown at room temperature, a PL peak centered at ~505 nm was onlyobserved, and in the crystalline V2O5 film, two peaks centered at ~505 nm and ~695 nm, which is known to correspond tooxygen defects, were revealed. The position of PL peak centered at 505 nm for both the amorphous and crystalline V2O5films showed a strong dependence on temperature, and the positions were 2.45 eV at 300 K and 2.35 eV at 10 K,respectively. The PL at 505 nm was due to the band energy transition in V2O5, and also, the reduction of the peak positionenergy with decreasing temperature was caused by a decrement of the lattice dilatation effect with reducing electron-phononinteraction.