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@article{ART001939548},
author={You,Sang-Ha and 이기정 and Kwang Joon Hong and Moon,Jong-Dae},
title={Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={6},
pages={229-236},
doi={10.6111/JKCGCT.2014.24.6.229}

TY - JOUR
AU - You,Sang-Ha
AU - 이기정
AU - Kwang Joon Hong
AU - Moon,Jong-Dae
TI - Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 229
EP - 236
SN - 1225-1429
AB - A stoichiometric mixture of evaporating materials for MnAl2S4 single crystal thin films was prepared fromhorizontal electric furnace. To obtain the single crystal thin films, MnAl2S4 mixed crystal was deposited on thoroughlyetched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatureswere 630oC and 410oC, respectively. The crystalline structure of the single crystal thin films was investigated by thephotoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap ofthe MnAl2S4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 3.7920 eV − (5.2729 ×10−4 eV/K)T2/(T + 786 K). In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ),the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. Theresults indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare within Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of 1.10 × 107, the MAPDof 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.
KW - MnAl2S4 single crystal thin films;Hot wall epitaxy (HWE);Energy band gap;Sensitivity;Maximum allowable power dissipation (MAPD);Response time
DO - 10.6111/JKCGCT.2014.24.6.229
ER -

You,Sang-Ha, 이기정, Kwang Joon Hong and Moon,Jong-Dae. (2014). Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method. Journal of the Korean Crystal Growth and Crystal Technology, 24(6), 229-236.

You,Sang-Ha, 이기정, Kwang Joon Hong and Moon,Jong-Dae. 2014, "Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.6 pp.229-236. Available from: doi:10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha, 이기정, Kwang Joon Hong, Moon,Jong-Dae "Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method" Journal of the Korean Crystal Growth and Crystal Technology 24.6 pp.229-236 (2014) : 229.

You,Sang-Ha, 이기정, Kwang Joon Hong, Moon,Jong-Dae. Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method. 2014; 24(6), 229-236. Available from: doi:10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha, 이기정, Kwang Joon Hong and Moon,Jong-Dae. "Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method" Journal of the Korean Crystal Growth and Crystal Technology 24, no.6 (2014) : 229-236.doi: 10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha; 이기정; Kwang Joon Hong; Moon,Jong-Dae. Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method. Journal of the Korean Crystal Growth and Crystal Technology, 24(6), 229-236. doi: 10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha; 이기정; Kwang Joon Hong; Moon,Jong-Dae. Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(6) 229-236. doi: 10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha, 이기정, Kwang Joon Hong, Moon,Jong-Dae. Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method. 2014; 24(6), 229-236. Available from: doi:10.6111/JKCGCT.2014.24.6.229

You,Sang-Ha, 이기정, Kwang Joon Hong and Moon,Jong-Dae. "Growth and optical conductivity properties for MnAl2S4 single crystal thin film by hot wall epitaxy method" Journal of the Korean Crystal Growth and Crystal Technology 24, no.6 (2014) : 229-236.doi: 10.6111/JKCGCT.2014.24.6.229