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Wet chemical etching of molten KOH/NaOH eutectic alloy to evaluate AlN single crystal

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2014, 24(6), pp.237-241
  • DOI : 10.6111/JKCGCT.2014.24.6.237
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Cheol Woo Park 1 홍윤표 1 Jae Hwa Park 1 오동근 1 Bonggeun Choi 1 이성국 2 Kwang Bo Shim 1

1한양대학교
2(주)유니모포트론

Accredited

ABSTRACT

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOHchemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observedusing a scanning electron microscope after 5 minutes etching at 350oC, was found to have a surface form of the respectiveother Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, Itwas calculated at 2 × 106/cm2~1010/cm2dislocation density. In the case of N-face, lattice defects in the form of the hexagonalpyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the Caxisdirection of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented inthe (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

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