@article{ART001939593},
author={Jin-Won Seo and Jun-Woo Kim and Yoonsoo Han and Kyoon Choi and Jong-Heun Lee},
title={Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={6},
pages={242-245},
doi={10.6111/JKCGCT.2014.24.6.242}
TY - JOUR
AU - Jin-Won Seo
AU - Jun-Woo Kim
AU - Yoonsoo Han
AU - Kyoon Choi
AU - Jong-Heun Lee
TI - Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 242
EP - 245
SN - 1225-1429
AB - In order to increase the thickness uniformity in chemical vapor depositon of silicon carbide, we have carried outCFD studies for a CVD apparatus having a horizontally-rotated 3-stage susceptor. We deposited silicon carbide films of3C-SiC phase showing quite uniform thickness between stages but not uniform one in the stage. The cause of thisnonuniformity is thought to be originated from the high rotational speed. And the uniformity between stages can be furtherincreased with the 120osplit type nozzles from CFD results. Through the formation of silicon carbide film on graphitesubstrates we can make oxidation-resistant and dust-free graphite components with high hardness for the semiconductorapplications.
KW - CFD;CVD;Silicon carbide;Susceptor;Thickness uniformity
DO - 10.6111/JKCGCT.2014.24.6.242
ER -
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi and Jong-Heun Lee. (2014). Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD. Journal of the Korean Crystal Growth and Crystal Technology, 24(6), 242-245.
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi and Jong-Heun Lee. 2014, "Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.6 pp.242-245. Available from: doi:10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi, Jong-Heun Lee "Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD" Journal of the Korean Crystal Growth and Crystal Technology 24.6 pp.242-245 (2014) : 242.
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi, Jong-Heun Lee. Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD. 2014; 24(6), 242-245. Available from: doi:10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi and Jong-Heun Lee. "Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD" Journal of the Korean Crystal Growth and Crystal Technology 24, no.6 (2014) : 242-245.doi: 10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo; Jun-Woo Kim; Yoonsoo Han; Kyoon Choi; Jong-Heun Lee. Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD. Journal of the Korean Crystal Growth and Crystal Technology, 24(6), 242-245. doi: 10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo; Jun-Woo Kim; Yoonsoo Han; Kyoon Choi; Jong-Heun Lee. Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(6) 242-245. doi: 10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi, Jong-Heun Lee. Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD. 2014; 24(6), 242-245. Available from: doi:10.6111/JKCGCT.2014.24.6.242
Jin-Won Seo, Jun-Woo Kim, Yoonsoo Han, Kyoon Choi and Jong-Heun Lee. "Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD" Journal of the Korean Crystal Growth and Crystal Technology 24, no.6 (2014) : 242-245.doi: 10.6111/JKCGCT.2014.24.6.242
