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@article{ART001962711},
author={A-Young Lee and KIM YOUNG KWAN},
title={The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2015},
volume={25},
number={1},
pages={13-19},
doi={10.6111/JKCGCT.2015.25.1.013}

TY - JOUR
AU - A-Young Lee
AU - KIM YOUNG KWAN
TI - The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2015
VL - 25
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 13
EP - 19
SN - 1225-1429
AB - Among the various possible factors affecting the Minority Carrier Life Time (MCLT) of the mc-Si crystal,dislocations formed during the cooling period after solidification were found to be a major element. It was confirmed thatother defects such as grain boundary or twin boundary were not determinative defects affecting the MCLT because most ofthese defects seemed to be formed during the solidification period. With a measurement of total thickness variation (TTV)and bow of the silicon wafers, it was found that residual stress remaining in the mc-Si crystal might be another majorfactor affecting the MCLT. Thus, it is expected that better quality of mc-Si can be grown when the cooling process rightafter solidification is carried out as slow as possible.
KW - Dislocation;Twin boundary;Grain boundary;Minority carrier life time;Residual stress
DO - 10.6111/JKCGCT.2015.25.1.013
ER -

A-Young Lee and KIM YOUNG KWAN. (2015). The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed. Journal of the Korean Crystal Growth and Crystal Technology, 25(1), 13-19.

A-Young Lee and KIM YOUNG KWAN. 2015, "The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed", Journal of the Korean Crystal Growth and Crystal Technology, vol.25, no.1 pp.13-19. Available from: doi:10.6111/JKCGCT.2015.25.1.013

A-Young Lee, KIM YOUNG KWAN "The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed" Journal of the Korean Crystal Growth and Crystal Technology 25.1 pp.13-19 (2015) : 13.

A-Young Lee, KIM YOUNG KWAN. The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed. 2015; 25(1), 13-19. Available from: doi:10.6111/JKCGCT.2015.25.1.013

A-Young Lee and KIM YOUNG KWAN. "The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed" Journal of the Korean Crystal Growth and Crystal Technology 25, no.1 (2015) : 13-19.doi: 10.6111/JKCGCT.2015.25.1.013

A-Young Lee; KIM YOUNG KWAN. The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed. Journal of the Korean Crystal Growth and Crystal Technology, 25(1), 13-19. doi: 10.6111/JKCGCT.2015.25.1.013

A-Young Lee; KIM YOUNG KWAN. The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed. Journal of the Korean Crystal Growth and Crystal Technology. 2015; 25(1) 13-19. doi: 10.6111/JKCGCT.2015.25.1.013

A-Young Lee, KIM YOUNG KWAN. The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed. 2015; 25(1), 13-19. Available from: doi:10.6111/JKCGCT.2015.25.1.013

A-Young Lee and KIM YOUNG KWAN. "The relationship between minority carrier life time and structural defects in silicon ingot grown with single seed" Journal of the Korean Crystal Growth and Crystal Technology 25, no.1 (2015) : 13-19.doi: 10.6111/JKCGCT.2015.25.1.013