Characterizations of graded AlGaN epilayer grown by HVPE (HVPE 방법에 의해 성장된 graded AlGaN 에피층의 특성)

CHANBIN LEE (이찬빈); 전헌수; 이찬미; Jeon Injun (전인준); Min Yang (양민); Sam Nyung Yi (이삼녕); Hyung Soo Ahn (안형수); Kim Suck Whan (김석환); Young-Moon Yu (유영문); Nobuhiko Sawaki

doi:10.6111/JKCGCT.2015.25.2.045

Characterizations of graded AlGaN epilayer grown by HVPE

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2015, 25(2), pp.45~50
DOI : 10.6111/JKCGCT.2015.25.2.045
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

CHANBIN LEE ¹, 전헌수 ¹, 이찬미 ¹, Jeon Injun ¹, Min Yang ¹, Sam Nyung Yi ¹, Hyung Soo Ahn ¹, Kim Suck Whan ², Young-Moon Yu ³, Nobuhiko Sawaki ⁴

¹한국해양대학교
²안동대학교
³부경대학교
⁴AIT

Accredited

ABSTRACT

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at 950 o C and 1145 o C, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak (Al0.74Ga0.26N) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

KEYWORDS

Graded AlGaN epilayer, FE-SEM, AFM, XRD, HVPE

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Characterizations of graded AlGaN epilayer grown by HVPE

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Characterizations of graded AlGaN epilayer grown by HVPE

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KEYWORDS

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