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The role of porous graphite plate for high quality SiC crystal growth by PVT method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(2), pp.51-55
  • DOI : 10.6111/JKCGCT.2015.25.2.051
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

이희준 1 이희태 2 Hee-Won Shin 1 Mi-Seon Park 1 Yeon-Suk Jang 1 Lee, Won Jae 1 여임규 3 은태희 4 김장열 3 전명철 5 이시현 6 Jung- Gon Kim 7

1동의대학교
2동의대학교 융합부품공학과
3포항산업과학연구원
4(재)포항산업과학연구원
5포스코
6(주)모간
7대구경북과학기술원

Accredited

ABSTRACT

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around 2100~2300oC and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch 4o off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

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