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@article{ART001985032},
author={하주형 and Mi-Seon Park and Lee, Won Jae and Young Jun Choi and Hae Yong Lee},
title={The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2015},
volume={25},
number={2},
pages={56-61},
doi={10.6111/JKCGCT.2015.25.2.056}

TY - JOUR
AU - 하주형
AU - Mi-Seon Park
AU - Lee, Won Jae
AU - Young Jun Choi
AU - Hae Yong Lee
TI - The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2015
VL - 25
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 56
EP - 61
SN - 1225-1429
AB - The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at 1000oC and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epilayer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at 1000oC, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at 1000oC and V/III ratio = 10 showed the lowest value FWHM for RC of aplane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.
KW - a-Plane GaN;r-Plane sapphire;HVPE
DO - 10.6111/JKCGCT.2015.25.2.056
ER -

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. (2015). The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 25(2), 56-61.

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. 2015, "The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.25, no.2 pp.56-61. Available from: doi:10.6111/JKCGCT.2015.25.2.056

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee "The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 25.2 pp.56-61 (2015) : 56.

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee. The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE. 2015; 25(2), 56-61. Available from: doi:10.6111/JKCGCT.2015.25.2.056

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. "The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 25, no.2 (2015) : 56-61.doi: 10.6111/JKCGCT.2015.25.2.056

하주형; Mi-Seon Park; Lee, Won Jae; Young Jun Choi; Hae Yong Lee. The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 25(2), 56-61. doi: 10.6111/JKCGCT.2015.25.2.056

하주형; Mi-Seon Park; Lee, Won Jae; Young Jun Choi; Hae Yong Lee. The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2015; 25(2) 56-61. doi: 10.6111/JKCGCT.2015.25.2.056

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee. The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE. 2015; 25(2), 56-61. Available from: doi:10.6111/JKCGCT.2015.25.2.056

하주형, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. "The effects of growth temperatures and V/III ratios at 1000oC for a-plane GaN epi-layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 25, no.2 (2015) : 56-61.doi: 10.6111/JKCGCT.2015.25.2.056