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@article{ART002001500},
author={Kang, Seung-Min},
title={A study on SiC crystal growth by sublimation process using resistance heating method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2015},
volume={25},
number={3},
pages={85-92},
doi={10.6111/JKCGCT.2015.25.3.085}

TY - JOUR
AU - Kang, Seung-Min
TI - A study on SiC crystal growth by sublimation process using resistance heating method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2015
VL - 25
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 85
EP - 92
SN - 1225-1429
AB - SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of 2100~2300oC at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.
KW - Resistant heating method;SiC;Crystal;Growth
DO - 10.6111/JKCGCT.2015.25.3.085
ER -

Kang, Seung-Min. (2015). A study on SiC crystal growth by sublimation process using resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology, 25(3), 85-92.

Kang, Seung-Min. 2015, "A study on SiC crystal growth by sublimation process using resistance heating method", Journal of the Korean Crystal Growth and Crystal Technology, vol.25, no.3 pp.85-92. Available from: doi:10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min "A study on SiC crystal growth by sublimation process using resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 25.3 pp.85-92 (2015) : 85.

Kang, Seung-Min. A study on SiC crystal growth by sublimation process using resistance heating method. 2015; 25(3), 85-92. Available from: doi:10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min. "A study on SiC crystal growth by sublimation process using resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 25, no.3 (2015) : 85-92.doi: 10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min. A study on SiC crystal growth by sublimation process using resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology, 25(3), 85-92. doi: 10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min. A study on SiC crystal growth by sublimation process using resistance heating method. Journal of the Korean Crystal Growth and Crystal Technology. 2015; 25(3) 85-92. doi: 10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min. A study on SiC crystal growth by sublimation process using resistance heating method. 2015; 25(3), 85-92. Available from: doi:10.6111/JKCGCT.2015.25.3.085

Kang, Seung-Min. "A study on SiC crystal growth by sublimation process using resistance heating method" Journal of the Korean Crystal Growth and Crystal Technology 25, no.3 (2015) : 85-92.doi: 10.6111/JKCGCT.2015.25.3.085