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@article{ART002020954},
author={Young Jun Joo and Cheong Ho Park and 정주진 and Kang, Seung-Min and 류길열 and 강성 and Cheol-Jin Kim},
title={Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2015},
volume={25},
number={4},
pages={127-134},
doi={10.6111/JKCGCT.2015.25.4.127}

TY - JOUR
AU - Young Jun Joo
AU - Cheong Ho Park
AU - 정주진
AU - Kang, Seung-Min
AU - 류길열
AU - 강성
AU - Cheol-Jin Kim
TI - Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2015
VL - 25
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 127
EP - 134
SN - 1225-1429
AB - Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity (285W/m · K), high electrical resistivity (≥ 10 14 Ω · cm), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.
KW - AlN;PVT;EPD;EBSD;TEM;Defect
DO - 10.6111/JKCGCT.2015.25.4.127
ER -

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성 and Cheol-Jin Kim. (2015). Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD). Journal of the Korean Crystal Growth and Crystal Technology, 25(4), 127-134.

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성 and Cheol-Jin Kim. 2015, "Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)", Journal of the Korean Crystal Growth and Crystal Technology, vol.25, no.4 pp.127-134. Available from: doi:10.6111/JKCGCT.2015.25.4.127

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성, Cheol-Jin Kim "Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)" Journal of the Korean Crystal Growth and Crystal Technology 25.4 pp.127-134 (2015) : 127.

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성, Cheol-Jin Kim. Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD). 2015; 25(4), 127-134. Available from: doi:10.6111/JKCGCT.2015.25.4.127

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성 and Cheol-Jin Kim. "Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)" Journal of the Korean Crystal Growth and Crystal Technology 25, no.4 (2015) : 127-134.doi: 10.6111/JKCGCT.2015.25.4.127

Young Jun Joo; Cheong Ho Park; 정주진; Kang, Seung-Min; 류길열; 강성; Cheol-Jin Kim. Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD). Journal of the Korean Crystal Growth and Crystal Technology, 25(4), 127-134. doi: 10.6111/JKCGCT.2015.25.4.127

Young Jun Joo; Cheong Ho Park; 정주진; Kang, Seung-Min; 류길열; 강성; Cheol-Jin Kim. Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD). Journal of the Korean Crystal Growth and Crystal Technology. 2015; 25(4) 127-134. doi: 10.6111/JKCGCT.2015.25.4.127

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성, Cheol-Jin Kim. Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD). 2015; 25(4), 127-134. Available from: doi:10.6111/JKCGCT.2015.25.4.127

Young Jun Joo, Cheong Ho Park, 정주진, Kang, Seung-Min, 류길열, 강성 and Cheol-Jin Kim. "Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD)" Journal of the Korean Crystal Growth and Crystal Technology 25, no.4 (2015) : 127-134.doi: 10.6111/JKCGCT.2015.25.4.127