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Thermoelectric properties of Bi2Te2.7Se0.3 grown by traveling heater method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(4), pp.135-139
  • DOI : 10.6111/JKCGCT.2015.25.4.135
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Im-Jun Roh 1 현도빈 1 Kim Jin Sang 1

1한국과학기술연구원

Accredited

ABSTRACT

Bi2Te3-Bi2Se3 alloy which is typical n-type thermoelectric material were grown by traveling heater method (THM) technique. We investigate the effect of the composition of 100-x(Bi2Te3) - x(Bi2Se3) and doping of n-type dopants such as SbI3 and CdCl2. Maximum figure of merit of Bi2Te3-Bi2Se3 alloy was observed with CdCl2 0.1 wt% (Z: 2.73 × 10−3 / K) and SbI3 0.05 wt% (Z: 2.29 × 10−3 /K). Deviation along the length of Bi2Te3-Bi2Se3 ingot grown by THM method is low, which indicates that the ingot is very homogenized. Also we observed the close relationship of between anisotropy ratio and dopant in the 90(Bi2Te3) - 10(Bi2Se3) alloys. And we confirmed the fact that anisotropy ratio exerts thermoelectric performance in Bi2Te3 based n-type thermoelectric material.

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