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Growth and optical conductivity properties for BaIn2S4 single crystal thin film by hot wall epitaxy

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(5), pp.173-181
  • DOI : 10.6111/JKCGCT.2015.25.5.173
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

kyunga Jeong 1 Kwang Joon Hong 2

1조선대학교 물리학과
2조선대학교

Accredited

ABSTRACT

A stoichiometric mixture of evaporating materials for BaIn2S4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, BaIn2S4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 620oC and 420oC, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of BaIn2S4 single crystal thin films measured from Hall effect by van der Pauw method are 6.13 × 1017 cm−3 and 222 cm2/v · s at 293 K, respectively. The temperature dependence of the energy band gap of the BaIn2S4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 3.0581 eV − (3.9511 × 10−3 eV/K)T2/(T + 536 K). The crystal field and the spin-orbit splitting energies for the valence band of the BaIn2S4 have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ 5 states of the valence band of the BaIn2S4/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C24-exciton peaks for n = 24.

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