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Electrical properties of piezoelectric PZT thick film by aerosol deposition method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(6), pp.239-244
  • DOI : 10.6111/JKCGCT.2015.25.6.239
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김기훈 1 Kook-soo Bang 1 Dong-Soo Park 2 Chan Park 1

1부경대학교
2재료연구소

Accredited

ABSTRACT

Lead zirconate titanate (PZT) thick films with thickness of 10~20 μm were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of 700 o C. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the 10 μm thick film with solid reaction process were 20 μC/cm 2 , 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.

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