본문 바로가기
  • Home

Analysis of thermal stress through finite element analysis during vertical Bridgman crystal growth of 2 inch sapphire

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(6), pp.231-238
  • DOI : 10.6111/JKCGCT.2015.25.6.231
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김재학 1 W. J. Lee 2 Yongho Park 1 Youngchul Lee 2

1부산대학교
2한국생산기술연구원

Accredited

ABSTRACT

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

Citation status

* References for papers published after 2023 are currently being built.