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Defects analysis of RE : YAG (RE = Nd 3+ , Er 3+ ) single crystal synthesized by Czochralski method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2016, 26(1), pp.1-7
  • DOI : 10.6111/JKCGCT.2016.26.1.001
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : December 28, 2015
  • Accepted : January 29, 2016
  • Published : February 29, 2016

Cheong Ho Park 1 Young Jun Joo 1 Hye Young Kim 1 Jang Bo Shim 2 Cheol-Jin Kim 1

1경상대학교
2한국화학연구원

Accredited

ABSTRACT

RE : YAG (RE = Nd 3+ , Er 3+ ) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solidliquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

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