Process design for solution growth of SiC single crystal based on multiphysics modeling (다중물리 유한요소해석에 의한 SiC 단결정의 용액성장 공정 설계)

Ji-Young Yoon (윤지영); Myung-Hyun Lee (이명현); Won-Seon Seo (서원선); Yong-Gun Shul (설용건); Seongmin Jeong (정성민)

doi:10.6111/JKCGCT.2016.26.1.008

Process design for solution growth of SiC single crystal based on multiphysics modeling

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(1), pp.8-13
DOI : 10.6111/JKCGCT.2016.26.1.008
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : November 20, 2015
Accepted : December 7, 2015
Published : February 29, 2016

Ji-Young Yoon ¹, Myung-Hyun Lee ¹, Won-Seon Seo ¹, Yong-Gun Shul ², Seongmin Jeong ¹

¹한국세라믹기술원
²연세대학교

Accredited

ABSTRACT

A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of 1600~1800oC. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.

KEYWORDS

SiC, Crystal growth, Top seeded solution growth, Multiphysics modeling, Finite element analysis

Citation status

* References for papers published after 2023 are currently being built.

[report] Yole Development / 2012 / “SiC2012”, Silicon carbide market analysis / Yole development

[journal] A. A. Lebedev / 1999 / Wide-gap semiconductors for high-power electronics / Semiconductors 33 : 999~

[journal] Y. M. Tairov / 1978 / Investigation of growth processes of ingots of silicon carbide single crystals / J. Cryst. Growth 43 : 209~

[journal] V. E. Chelnokov / 1997 / Overview of SiC power electronics / Diam. Relat. Mater 6 : 1480~

[journal] K. Kamei / 2009 / Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt / J. Cryst. Growth 311 : 855~

[journal] 신호용 / 2013 / Numerical analysis of sapphire crystal growth process using Ky and CZ method / 한국결정성장학회지 / 한국결정성장학회 23(2) : 59~66

[web] / COMSOL / http://www.comsol.com

[journal] 김진형 / 2013 / Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth / 한국결정성장학회지 / 한국결정성장학회 23(3) : 129~134

[journal] F. Mercier / 2010 / Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth / J. Cryst. Growth 312 : 155~

[web] / ACerS-NIST Phase Equilibria Diagrams Version 3.2.1CD-ROM Database, NIST Standard Reference Database 31 / http://ceramics.org/publications-and-resources/phase-equilibria-diagrams

[journal] F. Mercier / 2011 / Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics / J. Cryst. Growth 318 : 385~

[journal] J. Lefebure / 2011 / Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent / Cryst. Growth Des 12 : 909~

[journal] F. Mercier / 2011 / Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts / Jpn. J. Appl. Phys 50 : 5603~

[journal] K. Danno / 2010 / High-speed growth of high-quality 4H-SiC bulk by solution growth using Si-Cr based melt / Mater. Sci. Forum 645 : 13~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Process design for solution growth of SiC single crystal based on multiphysics modeling

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Process design for solution growth of SiC single crystal based on multiphysics modeling

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (1)

REFERENCES (14) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.