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Analysis of surface defect in RE : YAG (RE = Nd 3+ , Er 3+ , Yb 3+ ) single crystal using chemical polishing and etching

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2016, 26(4), pp.131-134
  • DOI : 10.6111/JKCGCT.2016.26.4.131
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : June 15, 2016
  • Accepted : July 22, 2016
  • Published : August 31, 2016

Jang Bo Shim 1 Jin Ki Kang 2 Young Kuk Lee 1

1한국화학연구원
2(주)엔티에스

Accredited

ABSTRACT

The conditions for chemical polishing and etching technique were investigated to reveal surface defects in RE : YAG (RE = Nd3+, Er3+, Yb3+) single crystals grown by Czochralski method. The optimal condition for chemical polishing was in 85 % H3PO4 solution at 330oC for 30 minutes with a specimen fixed in the vertical direction. In addition, the optimal condition for chemical etching was in 85 % H3PO4 solution at 260oC for 1 hour, and 70~80 μm sized triangular etch pits were observed on (111) face. As a result of defect density analysis, 1.9 × 103/cm2 for Nd(1 %) : YAG, 4.3 × 102/cm2 for Er(7.3 %) : YAG, and 5.1 × 102/cm2 for Yb(15 %) : YAG were measured.

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