@article{ART002159143},
author={Kyoung-Hee Lee},
title={The removal of saw marks on diamond wire-sawn single crystalline silicon wafers},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2016},
volume={26},
number={5},
pages={171-174},
doi={10.6111/JKCGCT.2016.26.5.171}
TY - JOUR
AU - Kyoung-Hee Lee
TI - The removal of saw marks on diamond wire-sawn single crystalline silicon wafers
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2016
VL - 26
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 171
EP - 174
SN - 1225-1429
AB - The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ((CH3)4NOH, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.
KW - Saw marks;Silicon;Czochralski;Diamond wire saw;Texturing;Chemical etching
DO - 10.6111/JKCGCT.2016.26.5.171
ER -
Kyoung-Hee Lee. (2016). The removal of saw marks on diamond wire-sawn single crystalline silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology, 26(5), 171-174.
Kyoung-Hee Lee. 2016, "The removal of saw marks on diamond wire-sawn single crystalline silicon wafers", Journal of the Korean Crystal Growth and Crystal Technology, vol.26, no.5 pp.171-174. Available from: doi:10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee "The removal of saw marks on diamond wire-sawn single crystalline silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 26.5 pp.171-174 (2016) : 171.
Kyoung-Hee Lee. The removal of saw marks on diamond wire-sawn single crystalline silicon wafers. 2016; 26(5), 171-174. Available from: doi:10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee. "The removal of saw marks on diamond wire-sawn single crystalline silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 26, no.5 (2016) : 171-174.doi: 10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee. The removal of saw marks on diamond wire-sawn single crystalline silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology, 26(5), 171-174. doi: 10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee. The removal of saw marks on diamond wire-sawn single crystalline silicon wafers. Journal of the Korean Crystal Growth and Crystal Technology. 2016; 26(5) 171-174. doi: 10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee. The removal of saw marks on diamond wire-sawn single crystalline silicon wafers. 2016; 26(5), 171-174. Available from: doi:10.6111/JKCGCT.2016.26.5.171
Kyoung-Hee Lee. "The removal of saw marks on diamond wire-sawn single crystalline silicon wafers" Journal of the Korean Crystal Growth and Crystal Technology 26, no.5 (2016) : 171-174.doi: 10.6111/JKCGCT.2016.26.5.171
