@article{ART002217881},
author={Jae Hwa Park and Hee Ae Lee and Joo Hyung Lee and Cheol Woo Park and Jung Hun Lee and Hyo Sang Kang and Suk Hyun Kang and Sin Young Bang and Seong Kuk Lee and Kwang Bo Shim},
title={Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2017},
volume={27},
number={2},
pages={89-93},
doi={10.6111/JKCGCT.2017.27.2.089}
TY - JOUR
AU - Jae Hwa Park
AU - Hee Ae Lee
AU - Joo Hyung Lee
AU - Cheol Woo Park
AU - Jung Hun Lee
AU - Hyo Sang Kang
AU - Suk Hyun Kang
AU - Sin Young Bang
AU - Seong Kuk Lee
AU - Kwang Bo Shim
TI - Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2017
VL - 27
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 89
EP - 93
SN - 1225-1429
AB - GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.
KW - HVPE;GaN;Dislocation density;Hexagonal V-pit
DO - 10.6111/JKCGCT.2017.27.2.089
ER -
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee and Kwang Bo Shim. (2017). Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control. Journal of the Korean Crystal Growth and Crystal Technology, 27(2), 89-93.
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee and Kwang Bo Shim. 2017, "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control", Journal of the Korean Crystal Growth and Crystal Technology, vol.27, no.2 pp.89-93. Available from: doi:10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee, Kwang Bo Shim "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control" Journal of the Korean Crystal Growth and Crystal Technology 27.2 pp.89-93 (2017) : 89.
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee, Kwang Bo Shim. Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control. 2017; 27(2), 89-93. Available from: doi:10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee and Kwang Bo Shim. "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control" Journal of the Korean Crystal Growth and Crystal Technology 27, no.2 (2017) : 89-93.doi: 10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park; Hee Ae Lee; Joo Hyung Lee; Cheol Woo Park; Jung Hun Lee; Hyo Sang Kang; Suk Hyun Kang; Sin Young Bang; Seong Kuk Lee; Kwang Bo Shim. Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control. Journal of the Korean Crystal Growth and Crystal Technology, 27(2), 89-93. doi: 10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park; Hee Ae Lee; Joo Hyung Lee; Cheol Woo Park; Jung Hun Lee; Hyo Sang Kang; Suk Hyun Kang; Sin Young Bang; Seong Kuk Lee; Kwang Bo Shim. Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control. Journal of the Korean Crystal Growth and Crystal Technology. 2017; 27(2) 89-93. doi: 10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee, Kwang Bo Shim. Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control. 2017; 27(2), 89-93. Available from: doi:10.6111/JKCGCT.2017.27.2.089
Jae Hwa Park, Hee Ae Lee, Joo Hyung Lee, Cheol Woo Park, Jung Hun Lee, Hyo Sang Kang, Suk Hyun Kang, Sin Young Bang, Seong Kuk Lee and Kwang Bo Shim. "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control" Journal of the Korean Crystal Growth and Crystal Technology 27, no.2 (2017) : 89-93.doi: 10.6111/JKCGCT.2017.27.2.089
