HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices (고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장)

Sunggeun Bae (배숭근); Jeon Injun (전인준); Min Yang (양민); Sam Nyung Yi (이삼녕); Hyung Soo Ahn (안형수); Jeon Hunsoo (전헌수); Kyoung Hwa Kim (김경화); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2017.27.6.275

HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2017, 27(6), pp.275-281
DOI : 10.6111/JKCGCT.2017.27.6.275
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : December 31, 2017

Sunggeun Bae ¹, Jeon Injun ¹, Min Yang ¹, Sam Nyung Yi ¹, Hyung Soo Ahn ¹, Jeon Hunsoo ¹, Kyoung Hwa Kim ¹, Kim Suck Whan ²

¹한국해양대학교
²안동대학교

Accredited

ABSTRACT

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mgdoped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

KEYWORDS

Mixed-source, HVPE, Mg doped AlN, Power semiconductor devices

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[journal] Y. F. Wu / 1996 / Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors / Appl. Phys. Lett. 69 : 1438~

[journal] N. H. Train / 2017 / On the mechanism of highly efficient p-type conduction of Mgdoped ultra-widebandgap AlN nanostructures / Appl. Phys. Lett. 110 : 032102~

[journal] V. Adivarahan / 2002 / Sub-milliwatt power III-N light emitting diodes at 285 nm / Jpn. J. Appl. Phys. 41 : L435~

[journal] G. Dohler / 1983 / n-i-p-i doping superlattices—metastable semiconductors with tunable properties / J. Vac. Sci. Technol. B 1 : 278~

[journal] 허인혜 / 2008 / Doping of Nitride Semiconductors by Using Mixed-source HVPE / 새물리 / 한국물리학회 56(3) : 272~277

[journal] S. Nakamura / 1992 / Hole compensation mechanism of p-type GaN films / Jpn. J. Appl. Phys. 31 : 1258~

[journal] K. S. Jang / 2007 / Characterization of AlGaN, Te-doped GaN and Mg-doped GaN grown by hydride vapor phase epitaxy / Phys. Stat. Sol. (c) 4 : 133~

[journal] H. Amano / 1989 / Ptype conduction in Mg-doped GaN treated with lowenergy electron beam irradiation (LEEBI) / Jpn. J. Appl. Phys. 28 : 2112~

[journal] B. R. Bennett / 2005 / Growth of InP high electron mobility transistor structures with Te doping / J. Crystal Growth 278 : 596~

[confproc] Y. Peng / 2014 / Tunable electronic structures of p-type Mg doping in AlN nanosheet / AIP Conference Proceedings 116 : 044306~

[journal] Y. Taniyasu / 2006 / An aluminium nitride light-emitting diode with a wavelength of 210 nanometres / Nature 325 : 441~

[confproc] S. Surender / 2016 / Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD / AIP Conference Proceedings 1731 : 080083~

[journal] K. Tamamura / 1986 / Magnesium doping of (Al,Ga)As in metalorganic chemical vapor deposition / Appl. Phys. Lett. 59 : 3549~

[journal] Y. Taniyasu / 2012 / Mg doping for p-type AlInN lattice-matched to GaN / Appl. Phys. Lett. 101 : 082113~

[journal] H. S. Jeon / 2009 / Characteristics of a Non-Phosphor White LED Grown by Using Mixed-Source HVPE / Journal of the Korean Physical Society / 한국물리학회 54(3) : 1262~1266

[journal] 양민 / 2008 / Structural Phase Variation of InGaN Micro-structures Grown by Mixed-source HVPE / 새물리 / 한국물리학회 56(3) : 238~243

[journal] 김경화 / 2005 / Growth and Characteristics of AlGaN Layer using Hydride Vapor Phase Epitaxy Method / 새물리 / 한국물리학회 50(3) : 175~179

[journal] 김경화 / 2004 / Hydride Vapor Phase Epitaxy Method for Grown of AlGaN Crystal / 새물리 / 한국물리학회 48(6) : 546~549

[journal] 정세교 / 2012 / The properties of AlGaN epi layer grown by HVPE / 한국결정성장학회지 / 한국결정성장학회 22(1) : 11~14

[journal] 이찬빈 / 2015 / Characterizations of graded AlGaN epilayer grown by HVPE / 한국결정성장학회지 / 한국결정성장학회 25(2) : 45~50

[journal] X. Sun / 2015 / Investigation of blue luminescence in Mg doped AlN films / J. Alloys Compd. 621 : 314~

[journal] J. Xiong / 2014 / Room temperature ferromagnetism in Mg-doped AlN semiconductor films / Mater. Lett. 117 : 276~

[journal] L. Rosenberger / 2008 / XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy / Surf. Interfaces 40 : 1254~

This paper was written with support from the National Research Foundation of Korea.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices

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