HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices (고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장)

Sunggeun Bae (배숭근); Jeon Injun (전인준); Min Yang (양민); Sam Nyung Yi (이삼녕); Hyung Soo Ahn (안형수); Jeon Hunsoo (전헌수); Kyoung Hwa Kim (김경화); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2017.27.6.275

HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2017, 27(6), pp.275~281
DOI : 10.6111/JKCGCT.2017.27.6.275
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : December 31, 2017

Sunggeun Bae ¹, Jeon Injun ¹, Min Yang ¹, Sam Nyung Yi ¹, Hyung Soo Ahn ¹, Jeon Hunsoo ¹, Kyoung Hwa Kim ¹, Kim Suck Whan ²

¹한국해양대학교
²안동대학교

Accredited

ABSTRACT

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mgdoped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

KEYWORDS

Mixed-source, HVPE, Mg doped AlN, Power semiconductor devices

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This paper was written with support from the National Research Foundation of Korea.

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