@article{ART002294533},
author={Sunggeun Bae and Jeon Injun and Kyoung Hwa Kim},
title={Growth of GaAs/AlGaAs structure for photoelectric cathode},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2017},
volume={27},
number={6},
pages={282-288},
doi={10.6111/JKCGCT.2017.27.6.282}
TY - JOUR
AU - Sunggeun Bae
AU - Jeon Injun
AU - Kyoung Hwa Kim
TI - Growth of GaAs/AlGaAs structure for photoelectric cathode
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2017
VL - 27
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 282
EP - 288
SN - 1225-1429
AB - In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zndoped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement.
The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole (1.25 mm × 25 mm) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of 8 × 10 18 /cm 2 by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.
KW - Photoelectric cathode;LPE;compound semiconductor;GaAs;AlGaAs
DO - 10.6111/JKCGCT.2017.27.6.282
ER -
Sunggeun Bae, Jeon Injun and Kyoung Hwa Kim. (2017). Growth of GaAs/AlGaAs structure for photoelectric cathode. Journal of the Korean Crystal Growth and Crystal Technology, 27(6), 282-288.
Sunggeun Bae, Jeon Injun and Kyoung Hwa Kim. 2017, "Growth of GaAs/AlGaAs structure for photoelectric cathode", Journal of the Korean Crystal Growth and Crystal Technology, vol.27, no.6 pp.282-288. Available from: doi:10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae, Jeon Injun, Kyoung Hwa Kim "Growth of GaAs/AlGaAs structure for photoelectric cathode" Journal of the Korean Crystal Growth and Crystal Technology 27.6 pp.282-288 (2017) : 282.
Sunggeun Bae, Jeon Injun, Kyoung Hwa Kim. Growth of GaAs/AlGaAs structure for photoelectric cathode. 2017; 27(6), 282-288. Available from: doi:10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae, Jeon Injun and Kyoung Hwa Kim. "Growth of GaAs/AlGaAs structure for photoelectric cathode" Journal of the Korean Crystal Growth and Crystal Technology 27, no.6 (2017) : 282-288.doi: 10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae; Jeon Injun; Kyoung Hwa Kim. Growth of GaAs/AlGaAs structure for photoelectric cathode. Journal of the Korean Crystal Growth and Crystal Technology, 27(6), 282-288. doi: 10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae; Jeon Injun; Kyoung Hwa Kim. Growth of GaAs/AlGaAs structure for photoelectric cathode. Journal of the Korean Crystal Growth and Crystal Technology. 2017; 27(6) 282-288. doi: 10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae, Jeon Injun, Kyoung Hwa Kim. Growth of GaAs/AlGaAs structure for photoelectric cathode. 2017; 27(6), 282-288. Available from: doi:10.6111/JKCGCT.2017.27.6.282
Sunggeun Bae, Jeon Injun and Kyoung Hwa Kim. "Growth of GaAs/AlGaAs structure for photoelectric cathode" Journal of the Korean Crystal Growth and Crystal Technology 27, no.6 (2017) : 282-288.doi: 10.6111/JKCGCT.2017.27.6.282
