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Optimization of chemical mechanical polishing for bulk AlN single crystal surface

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2018, 28(1), pp.51-56
  • DOI : 10.6111/JKCGCT.2018.28.1.051
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : November 21, 2017
  • Accepted : December 13, 2017
  • Published : February 28, 2018

Jung Hun Lee 1 Cheol Woo Park 1 Jae Hwa Park 1 Hyo Sang Kang 1 Suk Hyun Kang 1 Hee Ae Lee 1 Joo Hyung Lee 1 Jun Hyeong In 1 Kang, Seung-Min 2 Kwang Bo Shim 1

1한양대학교
2한서대학교

Accredited

ABSTRACT

To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and SiO2 slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of SiO2 slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

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