2018, Vol.28, No.1

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

pISSN : 1225-1429 / eISSN : 2234-5078
https://journal.kci.go.kr/jkcgct

The 23 wt% polyvinylidene fluoride (PVDF)/15 wt% polyurethane (PU) fibers were electrospun using the conjugated nozzle at a flow rate of 1.0 mL/h and an electric field of 1 kV/cm. The formation of β crystal phase in the PVDF and the PVDF/PU fibers was confirmed by Fourier transform infrared spectroscopy. After electrospinning, the asspun fibers were immersed in a boiling water and then dried at 100oC in a convection oven to make a crimp phenomenon. The crimps with a diameter of 2.0 ± 0.08 μm were observed for the PVDF/PU fibers after hydrothermal treatment without sacrificing the extent of β crystal phase. All the PU, PVDF and PVDF/PU fibers exhibited average cell viability of more than 98 %. The cell proliferation results suggested that L-929 cells adhered well to the PU, PVDF and PVDF/PU fibers and proliferated continuously with increasing time, indicating that the PVDF/PU fibers are highly applicable to the biomedical applications.

In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of 5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and 40 %. The initial particles (PZT, 2PZN-8PZT, 4PZN-6PZT) had irregular shape and submicron sizes. The asdeposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at the temperatures of 700 o C, and the films deposited on sapphire were annealed at 900 o C in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using by FE-SEM and HR-TEM.