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Variation of optical characteristics with the thickness of bulk GaN grown by HVPE

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2018, 28(1), pp.9-13
  • DOI : 10.6111/JKCGCT.2018.28.1.009
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : December 4, 2017
  • Accepted : January 4, 2018
  • Published : February 28, 2018

Hee Ae Lee 1 Jae Hwa Park 2 Jung Hun Lee 1 Joo Hyung Lee 1 Cheol Woo Park 2 Hyo Sang Kang 2 Suk Hyun Kang 1 Jun Hyeong In 1 Kwang Bo Shim 1

1한양대학교
2(주)에임즈마이크론

Accredited

ABSTRACT

In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

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