Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy (HVPE 방법으로 성장된 alpha-Ga2O3의 특성에 대한 VI/III ratio 변화 효과)

Hoki Son (손호기); Ye-ji Choi (최예지); Young Jin Lee (이영진); Mi-Jai Lee (이미재); Jinho Kim (김진호); Sun Woog Kim (김선욱); Yong-Ho Ra (라용호); Tae-Young Lim (임태영); Jonghee Hwang (황종희); Dae-Woo Jeon (전대우)

doi:10.6111/JKCGCT.2018.28.3.135

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2018, 28(3), pp.135~139
DOI : 10.6111/JKCGCT.2018.28.3.135
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : June 30, 2018

Hoki Son ¹, Ye-ji Choi ¹, Young Jin Lee ¹, Mi-Jai Lee ¹, Jinho Kim ¹, Sun Woog Kim ¹, Yong-Ho Ra ¹, Tae-Young Lim ¹, Jonghee Hwang ¹, Dae-Woo Jeon ¹

¹한국세라믹기술원

Accredited

ABSTRACT

In this study, we report the effect of VI/III ratio on α-Ga2O3 epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of α-Ga2O3 epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the α-Ga2O3 epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were 1.5 × 10 7 cm−2 and 5.4 × 10 9 cm−2 , respectively

KEYWORDS

α-Ga2O3, HVPE, VI/III ratio, Optical band gap

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

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