Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy (HVPE 방법으로 성장된 alpha-Ga2O3의 특성에 대한 VI/III ratio 변화 효과)

Hoki Son (손호기); Ye-ji Choi (최예지); Youngjin Lee (이영진); Mi-Jai Lee (이미재); Jinho Kim (김진호); Sun Woog Kim (김선욱); Yong-Ho Ra (라용호); Tae-Young Lim (임태영); Jonghee Hwang (황종희); Dae-Woo Jeon (전대우)

doi:10.6111/JKCGCT.2018.28.3.135

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2018, 28(3), pp.135-139
DOI : 10.6111/JKCGCT.2018.28.3.135
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : June 30, 2018

Hoki Son ¹, Ye-ji Choi ¹, Youngjin Lee ¹, Mi-Jai Lee ¹, Jinho Kim ¹, Sun Woog Kim ¹, Yong-Ho Ra ¹, Tae-Young Lim ¹, Jonghee Hwang ¹, Dae-Woo Jeon ¹

¹한국세라믹기술원

Accredited

ABSTRACT

In this study, we report the effect of VI/III ratio on α-Ga2O3 epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of α-Ga2O3 epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the α-Ga2O3 epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were 1.5 × 10 7 cm−2 and 5.4 × 10 9 cm−2 , respectively

KEYWORDS

α-Ga2O3, HVPE, VI/III ratio, Optical band gap

Citation status

* References for papers published after 2023 are currently being built.

[journal] J.Y. Taso / 2017 / Ultrawide-bandgap semiconductors: research opportunities and challenges / Adv. Electron. Mater. 4 : 1~

[journal] S.J. Pearton / 2018 / A review of <TEX>$Ga_2O_3$</TEX> material, processing, and devices / Appl. Phys. Rev. 5 : 011301~

[journal] A.M. Michael / 2017 / Oppotunities and future directions for <TEX>$Ga_2O_3$</TEX> / ECS J. Solid State Sci. Technol. 6 : 356~

[journal] M. Higashiwaki / 2013 / Depletion-mode <TEX>$Ga_2O_3$</TEX> metal-oxide-semiconductor field-effect transistors on <TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> (010) substrates and temperature dependence of their device characteristics / Appl. Phys. Lett. 103 : 123511~

[journal] S.C. Vanithakumari / 2009 / A one-step method for the growth of <TEX>$Ga_2O_3$</TEX>-nanorod-based white-light-emitting phosphors / Adv. Mater. 21 : 3581~

[journal] D.Y. Guo / 2014 / Fabrication of <TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> thin films and solar-blind photodetectors by laser MBE technology / Opt. Mater. Express. 4 : 1067~

[journal] C. Jin / 2012 / Ultrasensitive multiple networked <TEX>$Ga_2O_3$</TEX>-core/ZnO-shell nanorod gas sensors / Sens. Actuators B 161 : 223~

[journal] K. Sasaki / 2012 / Device-quality <TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> epitaxial films fabricated by ozone molecular beam epitaxy / Appl. Phys. Express. 5 : 035502~

[journal] T.N. Adam / 2017 / Incomplete ionization of a 110meV unintentional donor in <TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> and its effect on power devices / Sci. Rep. 7 : 13218~

[journal] W.Y. Kong / 2016 / Graphene-<TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> heterojuntion for highly sensitive deep uv photodetector application / Adv. Mater. 28 : 10725~

[journal] M. Lena / 2009 / Growth of Sn-doped <TEX>${\beta}$</TEX>-<TEX>$Ga_2O_3$</TEX> nanowires and <TEX>$Ga_2O_3$</TEX>-<TEX>$SnO_2$</TEX> heterostructures for gas sensing applications / Cryst. Growth Des. 9 : 4471~

[journal] S. Fujita / 2016 / Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices / Jpn. J. Appl. Phys. 55 : 1202A3~

[journal] K. Akaiwa / 2016 / Conductivity control of Sn-doped <TEX>${\alpha}$</TEX>-<TEX>$Ga_2O_3$</TEX> thin films grown on sapphire substrate / Jpn. J. Appl. Phys. 55 : 1202BA~

[journal] Y. Yao / 2018 / Growth and characterization of <TEX>${\alpha}$</TEX>-, <TEX>${\beta}$</TEX>-, and <TEX>${\varepsilon}$</TEX>-phases of <TEX>$Ga_2O_3$</TEX> using MOCVD and HVPE techniques / Mater. Res. Lett. 6 : 268~

[journal] F. Mezzadri / 2016 / Crystal structure and ferroelectric properties of <TEX>${\varepsilon}$</TEX>-<TEX>$Ga_2O_3$</TEX> films grown on (0001)-sapphire / Inorg. Chem. 55 : 12079~

[journal] T. Oshima / 2007 / <TEX>$Ga_2O_3$</TEX> thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors / Jpn. J. Appl. Phys. 46 : 7217~

[journal] B. Zhou / 2012 / Effects of oxygen/argon ratio and annealing on structural and optical properties of ZnO thin films / Appl. Surf. Sci. 258 : 5759~

[journal] Y. Oshima / 2015 / Halide vapor phase epitaxy of twin-free <TEX>${\alpha}$</TEX>-<TEX>$Ga_2O_3$</TEX> on sapphire (0001) substrate / Appl. Phys. Express. 8 : 055501~

[journal] Y. Chen / 2014 / Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD / Mater. Lett. 114 : 26~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (4)

REFERENCES (19) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.