@article{ART002378206},
author={Hee Ae Lee and Jae Hwa Park and Joo Hyung Lee and Cheol Woo Park and Hyo Sang Kang and Jun Hyeong In and Kwang Bo Shim},
title={The industrial trends of GaN substrates on the power electronic semiconductors},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2018},
volume={28},
number={4},
pages={159-165},
doi={10.6111/JKCGCT.2018.28.4.159}
TY - JOUR
AU - Hee Ae Lee
AU - Jae Hwa Park
AU - Joo Hyung Lee
AU - Cheol Woo Park
AU - Hyo Sang Kang
AU - Jun Hyeong In
AU - Kwang Bo Shim
TI - The industrial trends of GaN substrates on the power electronic semiconductors
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2018
VL - 28
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 159
EP - 165
SN - 1225-1429
AB - The demand on use of GaN single crystal substrates for high efficient and environment - friended high power electronic semiconductor has be increased. The industrial business trend on GaN substrate along with its research activities has been reviewed through the recent scientific and technical in formations on the basic of Yole report (2013). The research on the GaN single crystal substrate has been performed continuously for the purpose of the high quality and larger diameter, but its market has not been activated yet.
KW - GaN substrate;Power electronic;Semiconductor;Industrial trend
DO - 10.6111/JKCGCT.2018.28.4.159
ER -
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In and Kwang Bo Shim. (2018). The industrial trends of GaN substrates on the power electronic semiconductors. Journal of the Korean Crystal Growth and Crystal Technology, 28(4), 159-165.
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In and Kwang Bo Shim. 2018, "The industrial trends of GaN substrates on the power electronic semiconductors", Journal of the Korean Crystal Growth and Crystal Technology, vol.28, no.4 pp.159-165. Available from: doi:10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In, Kwang Bo Shim "The industrial trends of GaN substrates on the power electronic semiconductors" Journal of the Korean Crystal Growth and Crystal Technology 28.4 pp.159-165 (2018) : 159.
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In, Kwang Bo Shim. The industrial trends of GaN substrates on the power electronic semiconductors. 2018; 28(4), 159-165. Available from: doi:10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In and Kwang Bo Shim. "The industrial trends of GaN substrates on the power electronic semiconductors" Journal of the Korean Crystal Growth and Crystal Technology 28, no.4 (2018) : 159-165.doi: 10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee; Jae Hwa Park; Joo Hyung Lee; Cheol Woo Park; Hyo Sang Kang; Jun Hyeong In; Kwang Bo Shim. The industrial trends of GaN substrates on the power electronic semiconductors. Journal of the Korean Crystal Growth and Crystal Technology, 28(4), 159-165. doi: 10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee; Jae Hwa Park; Joo Hyung Lee; Cheol Woo Park; Hyo Sang Kang; Jun Hyeong In; Kwang Bo Shim. The industrial trends of GaN substrates on the power electronic semiconductors. Journal of the Korean Crystal Growth and Crystal Technology. 2018; 28(4) 159-165. doi: 10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In, Kwang Bo Shim. The industrial trends of GaN substrates on the power electronic semiconductors. 2018; 28(4), 159-165. Available from: doi:10.6111/JKCGCT.2018.28.4.159
Hee Ae Lee, Jae Hwa Park, Joo Hyung Lee, Cheol Woo Park, Hyo Sang Kang, Jun Hyeong In and Kwang Bo Shim. "The industrial trends of GaN substrates on the power electronic semiconductors" Journal of the Korean Crystal Growth and Crystal Technology 28, no.4 (2018) : 159-165.doi: 10.6111/JKCGCT.2018.28.4.159
