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@article{ART002378231},
author={Gyong-Phil Yin and Kang, Seung-Min},
title={A study on the AlN crystal growth using its thin films grown on SiC substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2018},
volume={28},
number={4},
pages={170-174},
doi={10.6111/JKCGCT.2018.28.4.170}

TY - JOUR
AU - Gyong-Phil Yin
AU - Kang, Seung-Min
TI - A study on the AlN crystal growth using its thin films grown on SiC substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2018
VL - 28
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 170
EP - 174
SN - 1225-1429
AB - AlN crystal is been developing in global site for many years and 1 inch diameter wafer was already developed but it is demanding the efforts for the better quality. On the other hand, also the 2-inch size is developing recently to reduce the unit cost for manufacturing and to use to fabrication of the UV LED chips. In this study, we tried to evaluate the possibility of bulk AlN crystals on his thin films by PVT method. The AlN thin film was grown on SiC single crystal 2” wafer by HVPE method. We successfully grew AlN bulk crystal of a thickness of 7 mm using its thin film of a thickness of 10 μm as a seed crystal. The resultants of AlN crystals were identified by metallurgical microscope, optical stereographic microscope and DCXRD measurement.
KW - AlN;AlN crystal;Crystal growth;PVT method;2 inch crystal
DO - 10.6111/JKCGCT.2018.28.4.170
ER -

Gyong-Phil Yin and Kang, Seung-Min. (2018). A study on the AlN crystal growth using its thin films grown on SiC substrate. Journal of the Korean Crystal Growth and Crystal Technology, 28(4), 170-174.

Gyong-Phil Yin and Kang, Seung-Min. 2018, "A study on the AlN crystal growth using its thin films grown on SiC substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.28, no.4 pp.170-174. Available from: doi:10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin, Kang, Seung-Min "A study on the AlN crystal growth using its thin films grown on SiC substrate" Journal of the Korean Crystal Growth and Crystal Technology 28.4 pp.170-174 (2018) : 170.

Gyong-Phil Yin, Kang, Seung-Min. A study on the AlN crystal growth using its thin films grown on SiC substrate. 2018; 28(4), 170-174. Available from: doi:10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin and Kang, Seung-Min. "A study on the AlN crystal growth using its thin films grown on SiC substrate" Journal of the Korean Crystal Growth and Crystal Technology 28, no.4 (2018) : 170-174.doi: 10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin; Kang, Seung-Min. A study on the AlN crystal growth using its thin films grown on SiC substrate. Journal of the Korean Crystal Growth and Crystal Technology, 28(4), 170-174. doi: 10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin; Kang, Seung-Min. A study on the AlN crystal growth using its thin films grown on SiC substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2018; 28(4) 170-174. doi: 10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin, Kang, Seung-Min. A study on the AlN crystal growth using its thin films grown on SiC substrate. 2018; 28(4), 170-174. Available from: doi:10.6111/JKCGCT.2018.28.4.170

Gyong-Phil Yin and Kang, Seung-Min. "A study on the AlN crystal growth using its thin films grown on SiC substrate" Journal of the Korean Crystal Growth and Crystal Technology 28, no.4 (2018) : 170-174.doi: 10.6111/JKCGCT.2018.28.4.170