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A study on the growth of 3 inch grade AlN crystal

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2019, 29(3), pp.140-142
  • DOI : 10.6111/JKCGCT.2019.29.3.140
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : June 10, 2019
  • Accepted : June 17, 2019
  • Published : June 30, 2019

Kang, Seung-Min 1

1한서대학교

Accredited

ABSTRACT

AlN (Aluminum Nitride) crystal which could be used to substrates for UV LEDs was grown by PVT ((PhysicalVapor Transport) method. 3 inch AlN single crystal with a thickenss of 4 mm was grown using Polycrystalline seed for120 hours. In this report, a result of 3 inch polycrystalline bulk AlN growth behavior using large size crucible and growthcondition were reported.

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