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@article{ART002497233},
author={Soyeon An and Dae-Woo Jeon and Jonghee Hwang and Yong-Ho Ra},
title={High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2019},
volume={29},
number={4},
pages={143-148},
doi={10.6111/JKCGCT.2019.29.4.143}

TY - JOUR
AU - Soyeon An
AU - Dae-Woo Jeon
AU - Jonghee Hwang
AU - Yong-Ho Ra
TI - High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2019
VL - 29
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 143
EP - 148
SN - 1225-1429
AB - We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.
KW - Nanowire;InGaN;Photocatalyst;Molecular beam epitaxy;Water splitting
DO - 10.6111/JKCGCT.2019.29.4.143
ER -

Soyeon An, Dae-Woo Jeon, Jonghee Hwang and Yong-Ho Ra. (2019). High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 29(4), 143-148.

Soyeon An, Dae-Woo Jeon, Jonghee Hwang and Yong-Ho Ra. 2019, "High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.29, no.4 pp.143-148. Available from: doi:10.6111/JKCGCT.2019.29.4.143

Soyeon An, Dae-Woo Jeon, Jonghee Hwang, Yong-Ho Ra "High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 29.4 pp.143-148 (2019) : 143.

Soyeon An, Dae-Woo Jeon, Jonghee Hwang, Yong-Ho Ra. High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy. 2019; 29(4), 143-148. Available from: doi:10.6111/JKCGCT.2019.29.4.143

Soyeon An, Dae-Woo Jeon, Jonghee Hwang and Yong-Ho Ra. "High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 29, no.4 (2019) : 143-148.doi: 10.6111/JKCGCT.2019.29.4.143

Soyeon An; Dae-Woo Jeon; Jonghee Hwang; Yong-Ho Ra. High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 29(4), 143-148. doi: 10.6111/JKCGCT.2019.29.4.143

Soyeon An; Dae-Woo Jeon; Jonghee Hwang; Yong-Ho Ra. High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2019; 29(4) 143-148. doi: 10.6111/JKCGCT.2019.29.4.143

Soyeon An, Dae-Woo Jeon, Jonghee Hwang, Yong-Ho Ra. High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy. 2019; 29(4), 143-148. Available from: doi:10.6111/JKCGCT.2019.29.4.143

Soyeon An, Dae-Woo Jeon, Jonghee Hwang and Yong-Ho Ra. "High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 29, no.4 (2019) : 143-148.doi: 10.6111/JKCGCT.2019.29.4.143