A study on the nitridation of GaN crystal growth by HVPE method (HVPE법을 활용한 GaN 성장시 질화처리에 관한 연구)

Seung Hoon Lee (이승훈); Joo Hyung Lee (이주형); Hee Ae Lee (이희애); Oh Nuri (오누리); Sung Yi (이성철); Hyo Sang Kang (강효상); Seong Kuk Lee (이성국); Jae Duk Yang (양재득); Jae Hwa Park (박재화)

doi:10.6111/JKCGCT.2019.29.4.149

A study on the nitridation of GaN crystal growth by HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(4), pp.149-153
DOI : 10.6111/JKCGCT.2019.29.4.149
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : August 8, 2019
Accepted : August 14, 2019
Published : August 31, 2019

Seung Hoon Lee ¹, Joo Hyung Lee ¹, Hee Ae Lee ¹, Oh Nuri ¹, Sung Yi ¹, Hyo Sang Kang ¹, Seong Kuk Lee ², Jae Duk Yang ², Jae Hwa Park ²

¹한양대학교
²에임즈마이크론(주)

Accredited

ABSTRACT

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

KEYWORDS

Gallium nitiride, HVPE, Nitridation, Surface morphology, Hillock

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

A study on the nitridation of GaN crystal growth by HVPE method

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

A study on the nitridation of GaN crystal growth by HVPE method

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