Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy (원뿔 형태의 patterned sapphire substrate 위에 성장한 α-Ga2O3의 특성분석)

Hoki Son (손호기); Ye-ji Choi (최예지); Young-Jin Lee (이영진); Jinho Kim (김진호); Sun Woog Kim (김선욱); Yong-Ho Ra (라용호); Tae-Young Lim (임태영); Jonghee Hwang (황종희); Dae-Woo Jeon (전대우)

doi:10.6111/JKCGCT.2019.29.4.173

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(4), pp.173-178
DOI : 10.6111/JKCGCT.2019.29.4.173
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : July 29, 2019
Accepted : August 12, 2019
Published : August 31, 2019

Hoki Son ¹, Ye-ji Choi ¹, Young-Jin Lee ¹, Jinho Kim ¹, Sun Woog Kim ¹, Yong-Ho Ra ¹, Tae-Young Lim ¹, Jonghee Hwang ¹, Dae-Woo Jeon ¹

¹한국세라믹기술원

Accredited

ABSTRACT

In this study, we demonstrated a characterization of α-Ga2O3 grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An α-Ga2O3 was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of α-Ga2O3 was gradually increased to confirm growth mechanism of α-Ga2O3 grown on the PSS. A growth temperature was changed to 470-550°C. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of α-Ga2O3 , due to lateral growth that occurs during the growth process.

KEYWORDS

α-Ga 2 O 3, HVPE, PSS, Refractive index

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[journal] M. Higashiwaki / 2016 / Current status of Ga2O3 power devices / Jpn. J. Appl. Phys 55 : 1202~

[journal] Z. Hu / 2018 / Enhancement-mode Ga2O3 vertical transistor with breakdown voltage > 1 kV / IEEE Electron Device Lett 39 : 869~

[journal] S.J. Pearton / 2018 / Perspective:Ga2O3 for ultra-high power rectifiers and MOSFETS / J. Appl. Phys 124 : 220901~

[journal] D.Y. Guo / 2016 / Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin films / Mater. Lett 164 : 364~

[journal] D.Y. Guo / 2014 / Fabrication of β-Ga2O3 thin films and solar-blind photodetector by laser MBE technology / Opt. Mater. Express 4 : 1067~

[journal] C. Jin / 2012 / Ultrasensitive multiple networked Ga2O3-core/ZnO-shell nanorod gas sensors / Sens. Actuators B 161 : 223~

[journal] K. Sasaki / 2012 / Device-quality β-Ga2O3epitaxial films fabricated by ozone molecular beam epitaxy / Appl. Phys. Express 5 : 035502~

[journal] M. Higashiwaki / 2013 / Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics / Appl. Phys. Lett 103 : 123511~

[journal] K. Kaneko / 2012 / Evaluation of misfit in alpha-Ga2O3 epitaxial growth on alpha-Al2O3 substrate / Jpn. J. Appl. Phys 51 : 020201~

[journal] K. Kaneko / 2013 / Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3 / J. Appl. Phys 113 : 233901~

[journal] K. Akaiwa / 2016 / Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrate / Jpn. J. Appl. Phys 55 : 1202~

[journal] Y. Oshima / 2015 / Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrate / Appl. Phys. Express 8 : 055501~

[journal] Dong-Hun Kang / 2008 / Growth and Evaluation of GaN Grown on Patterned Sapphire Substrates / Journal of the Korean Physical Society / 한국물리학회 52(6) : 1895~1899

[journal] H. K. Son / 2019 / Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy / J. Alloys Compd 773 : 631~

[journal] H.K. Son / 2019 / Influence of post-annealing on properties of α-Ga2O3 epilayer grown by halide vapor phase epitaxy / ECS J. Solid State Sci. Technol 7 : Q1~

[journal] Y. Chen / 2018 / A study of GaN nucleation and coalescence in the initial growth stage on nanoscale patterned sapphire substrate via MOCVD / Cryst. Eng. Comm 20 : 6811~

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

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