Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy (원뿔 형태의 patterned sapphire substrate 위에 성장한 α-Ga2O3의 특성분석)

Hoki Son (손호기); Ye-ji Choi (최예지); Young-Jin Lee (이영진); Jinho Kim (김진호); Sun Woog Kim (김선욱); Yong-Ho Ra (라용호); Tae-Young Lim (임태영); Jonghee Hwang (황종희); Dae-Woo Jeon (전대우)

doi:10.6111/JKCGCT.2019.29.4.173

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(4), pp.173~178
DOI : 10.6111/JKCGCT.2019.29.4.173
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : July 29, 2019
Accepted : August 12, 2019
Published : August 31, 2019

Hoki Son ¹, Ye-ji Choi ¹, Young-Jin Lee ¹, Jinho Kim ¹, Sun Woog Kim ¹, Yong-Ho Ra ¹, Tae-Young Lim ¹, Jonghee Hwang ¹, Dae-Woo Jeon ¹

¹한국세라믹기술원

Accredited

ABSTRACT

In this study, we demonstrated a characterization of α-Ga2O3 grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An α-Ga2O3 was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of α-Ga2O3 was gradually increased to confirm growth mechanism of α-Ga2O3 grown on the PSS. A growth temperature was changed to 470-550°C. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of α-Ga2O3 , due to lateral growth that occurs during the growth process.

KEYWORDS

α-Ga 2 O 3, HVPE, PSS, Refractive index

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

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