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Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2019, 29(4), pp.179~186
  • DOI : 10.6111/JKCGCT.2019.29.4.179
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : June 24, 2019
  • Accepted : July 16, 2019
  • Published : August 31, 2019

Sang Hun Park 1,  Lee Han Sol 1,  Hyung Soo Ahn 1,  Min Yang 1

1한국해양대학교

Accredited

ABSTRACT

In this study, we investigated the structural properties of Ga2O3 thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. Ga2O3 thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of Ga2O3 changed from ε-phase to β-phase depending on the growth temperature. The crystal structure of ε-Ga2O3 was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ε-Ga2O3 showed much better photocurrent characteristics in the 266 nm UV range than in the visible range

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