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@article{ART002497281},
author={Sang Hun Park and Lee Han Sol and Hyung Soo Ahn and Min Yang},
title={Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2019},
volume={29},
number={4},
pages={179-186},
doi={10.6111/JKCGCT.2019.29.4.179}

TY - JOUR
AU - Sang Hun Park
AU - Lee Han Sol
AU - Hyung Soo Ahn
AU - Min Yang
TI - Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2019
VL - 29
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 179
EP - 186
SN - 1225-1429
AB - In this study, we investigated the structural properties of Ga2O3 thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. Ga2O3 thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of Ga2O3 changed from ε-phase to β-phase depending on the growth temperature. The crystal structure of ε-Ga2O3 was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ε-Ga2O3 showed much better photocurrent characteristics in the 266 nm UV range than in the visible range
KW - ε-Ga2O3;MOCVD;Structural properties;MSM photodetector;Photo-electric properties
DO - 10.6111/JKCGCT.2019.29.4.179
ER -

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn and Min Yang. (2019). Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors. Journal of the Korean Crystal Growth and Crystal Technology, 29(4), 179-186.

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn and Min Yang. 2019, "Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors", Journal of the Korean Crystal Growth and Crystal Technology, vol.29, no.4 pp.179-186. Available from: doi:10.6111/JKCGCT.2019.29.4.179

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn, Min Yang "Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors" Journal of the Korean Crystal Growth and Crystal Technology 29.4 pp.179-186 (2019) : 179.

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn, Min Yang. Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors. 2019; 29(4), 179-186. Available from: doi:10.6111/JKCGCT.2019.29.4.179

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn and Min Yang. "Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors" Journal of the Korean Crystal Growth and Crystal Technology 29, no.4 (2019) : 179-186.doi: 10.6111/JKCGCT.2019.29.4.179

Sang Hun Park; Lee Han Sol; Hyung Soo Ahn; Min Yang. Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors. Journal of the Korean Crystal Growth and Crystal Technology, 29(4), 179-186. doi: 10.6111/JKCGCT.2019.29.4.179

Sang Hun Park; Lee Han Sol; Hyung Soo Ahn; Min Yang. Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors. Journal of the Korean Crystal Growth and Crystal Technology. 2019; 29(4) 179-186. doi: 10.6111/JKCGCT.2019.29.4.179

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn, Min Yang. Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors. 2019; 29(4), 179-186. Available from: doi:10.6111/JKCGCT.2019.29.4.179

Sang Hun Park, Lee Han Sol, Hyung Soo Ahn and Min Yang. "Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors" Journal of the Korean Crystal Growth and Crystal Technology 29, no.4 (2019) : 179-186.doi: 10.6111/JKCGCT.2019.29.4.179