@article{ART002537806},
author={Dong-Geun Shin and Byung-Sook Kim and Hae-Rok Son and Moo-Seong Kim},
title={Study on the growth of 4H-SiC single crystal with high purity SiC fine powder},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2019},
volume={29},
number={6},
pages={383-388},
doi={10.6111/JKCGCT.2019.29.6.383}
TY - JOUR
AU - Dong-Geun Shin
AU - Byung-Sook Kim
AU - Hae-Rok Son
AU - Moo-Seong Kim
TI - Study on the growth of 4H-SiC single crystal with high purity SiC fine powder
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2019
VL - 29
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 383
EP - 388
SN - 1225-1429
AB - High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100°C. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.
KW - SiC;Silicon carbide single crystal;SiC powder;High purity;Impurity;PVT;Carbothermal reduction
DO - 10.6111/JKCGCT.2019.29.6.383
ER -
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son and Moo-Seong Kim. (2019). Study on the growth of 4H-SiC single crystal with high purity SiC fine powder. Journal of the Korean Crystal Growth and Crystal Technology, 29(6), 383-388.
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son and Moo-Seong Kim. 2019, "Study on the growth of 4H-SiC single crystal with high purity SiC fine powder", Journal of the Korean Crystal Growth and Crystal Technology, vol.29, no.6 pp.383-388. Available from: doi:10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son, Moo-Seong Kim "Study on the growth of 4H-SiC single crystal with high purity SiC fine powder" Journal of the Korean Crystal Growth and Crystal Technology 29.6 pp.383-388 (2019) : 383.
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son, Moo-Seong Kim. Study on the growth of 4H-SiC single crystal with high purity SiC fine powder. 2019; 29(6), 383-388. Available from: doi:10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son and Moo-Seong Kim. "Study on the growth of 4H-SiC single crystal with high purity SiC fine powder" Journal of the Korean Crystal Growth and Crystal Technology 29, no.6 (2019) : 383-388.doi: 10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin; Byung-Sook Kim; Hae-Rok Son; Moo-Seong Kim. Study on the growth of 4H-SiC single crystal with high purity SiC fine powder. Journal of the Korean Crystal Growth and Crystal Technology, 29(6), 383-388. doi: 10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin; Byung-Sook Kim; Hae-Rok Son; Moo-Seong Kim. Study on the growth of 4H-SiC single crystal with high purity SiC fine powder. Journal of the Korean Crystal Growth and Crystal Technology. 2019; 29(6) 383-388. doi: 10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son, Moo-Seong Kim. Study on the growth of 4H-SiC single crystal with high purity SiC fine powder. 2019; 29(6), 383-388. Available from: doi:10.6111/JKCGCT.2019.29.6.383
Dong-Geun Shin, Byung-Sook Kim, Hae-Rok Son and Moo-Seong Kim. "Study on the growth of 4H-SiC single crystal with high purity SiC fine powder" Journal of the Korean Crystal Growth and Crystal Technology 29, no.6 (2019) : 383-388.doi: 10.6111/JKCGCT.2019.29.6.383
