Properties of AlN epilayer grown on 6H-SiC substrate by mixed-source HVPE method (6H-SiC 기판 위에 혼합소스 HVPE 방법으로 성장된 AlN 에피층 특성)

ParkJunghyun (박정현); Kyoung Hwa Kim (김경화); Jeon Injun (전인준); Hyung Soo Ahn (안형수); Min Yang (양민); Sam Nyung Yi (이삼녕); Cho, Chae-Ryong (조채용); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2020.30.3.096

Properties of AlN epilayer grown on 6H-SiC substrate by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2020, 30(3), pp.96~102
DOI : 10.6111/JKCGCT.2020.30.3.096
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : May 25, 2020
Accepted : June 8, 2020
Published : June 30, 2020

ParkJunghyun ¹, Kyoung Hwa Kim ², Jeon Injun ³, Hyung Soo Ahn ¹, Min Yang ¹, Sam Nyung Yi ¹, Cho, Chae-Ryong ³, Kim Suck Whan ⁴

¹한국해양대학교
²한국해양대학교 화합물반도체공정교육센터
³부산대학교
⁴안동대학교

Accredited

ABSTRACT

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy(MS-HVPE). AlN epilayer of 0.5 μm thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayergrown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹cm⁻² and edge dislocation density of 3.8 × 10⁹cm⁻² was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

KEYWORDS

6H-SiC, AlN epilayer, Mixed-source, HVPE method, Power semiconductor device

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