@article{ART002599324},
author={Geug Tae Kim and Moo Hyun Kwon},
title={Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2020},
volume={30},
number={3},
pages={117-122},
doi={10.6111/JKCGCT.2020.30.3.117}
TY - JOUR
AU - Geug Tae Kim
AU - Moo Hyun Kwon
TI - Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2020
VL - 30
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 117
EP - 122
SN - 1225-1429
AB - In last few decades, although thermal and/or solutal buoyancy-driven recirculating flows in a closed ampoule have been intensively studies a s a model problem, t here exist interesting total molar f lux of Hg₂Br₂ that have been unreported in the literature. It is concluded that the total molar flux of Hg₂Br₂(A) increases linearly and directly as the temperature difference regions in the range of 10°C≤ΔT≤ 50°, 3.5×10³≤ Grt≤4.08×10³, 4.94×10⁴≤Grs≤6.87×10⁴. For the range of 10 Torr≤ PB≤ 150 Torr, the total molar flux of Hg₂Br₂(A) decays second order exponentially as the partial pressure of component B (argon as an impurity), PB increases. From the view point of energy transport, the fewer the partial pressure of component B (argon), PB is, the more the energy transport is achieved.
KW - Double diffusion;Physical vapor transport;Hg₂Br₂
DO - 10.6111/JKCGCT.2020.30.3.117
ER -
Geug Tae Kim and Moo Hyun Kwon. (2020). Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂. Journal of the Korean Crystal Growth and Crystal Technology, 30(3), 117-122.
Geug Tae Kim and Moo Hyun Kwon. 2020, "Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂", Journal of the Korean Crystal Growth and Crystal Technology, vol.30, no.3 pp.117-122. Available from: doi:10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim, Moo Hyun Kwon "Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂" Journal of the Korean Crystal Growth and Crystal Technology 30.3 pp.117-122 (2020) : 117.
Geug Tae Kim, Moo Hyun Kwon. Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂. 2020; 30(3), 117-122. Available from: doi:10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim and Moo Hyun Kwon. "Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂" Journal of the Korean Crystal Growth and Crystal Technology 30, no.3 (2020) : 117-122.doi: 10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim; Moo Hyun Kwon. Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂. Journal of the Korean Crystal Growth and Crystal Technology, 30(3), 117-122. doi: 10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim; Moo Hyun Kwon. Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂. Journal of the Korean Crystal Growth and Crystal Technology. 2020; 30(3) 117-122. doi: 10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim, Moo Hyun Kwon. Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂. 2020; 30(3), 117-122. Available from: doi:10.6111/JKCGCT.2020.30.3.117
Geug Tae Kim and Moo Hyun Kwon. "Double-diffusive convection affected by conductive and insulating side walls during physical vapor transport of Hg₂Br₂" Journal of the Korean Crystal Growth and Crystal Technology 30, no.3 (2020) : 117-122.doi: 10.6111/JKCGCT.2020.30.3.117
