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Crystal growth of ring-shaped SiC polycrystal via physical vapor transport method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(5), pp.163-167
  • DOI : 10.6111/JKCGCT.2020.30.5.163
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : July 20, 2020
  • Accepted : August 26, 2020
  • Published : October 31, 2020

Jin Yong Park 1 Jeong-Hui Kim 1 Woo-Yeon Kim 1 Mi-Seon Park 1 Yeon-Suk Jang 1 Eunjin Jung 2 Jin-Ki Kang 3 Lee, Won Jae 1

1동의대학교
2주식회사 케이엑스티
3(주)악셀

Accredited

ABSTRACT

Ring-shaped SiC (Silicon carbide) polycrystals used as an inner material in semiconductor etching equipment was manufactured using the PVT (Physical Vapor Transport) method. A graphite cylinder structure was placed inside thegraphite crucible to grow a ring-shaped SiC polycrystal by the PVT method. The crystal polytype of grown crystal were analyzed using a Raman and an UVF (Ultra Violet Fluorescence) analysis. And the microstructure and components of SiC crystal were identified by a SEM (Scanning Electron Microscope) and EDS (Energy Disruptive Spectroscopy) analyses. The grain size and growth rate of SiC polycrystals fabricated by this method was varied with temperature variation in the initial stage of growth process.

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