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Electrical properties of PZN-PZT thick films formed by aerosol deposition process

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(5), pp.183~188
  • DOI : 10.6111/JKCGCT.2020.30.5.183
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : August 12, 2020
  • Accepted : August 25, 2020
  • Published : October 31, 2020

Ochirkhuyag Tungalaltamir 1,  Joo-Hee Jang 1,  Yoon-Soo Park 1,  Dong-Soo Park 2,  Chan Park 1

1부경대학교
2재료연구소

Accredited

ABSTRACT

Lead zinc niobate (PZN)-added lead zirconate titanate (PZT) thick films with thickness of 5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0 %, 20 % and to 40 %. The PZN-added PZT film showed poorer electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700°C. On the other hand, the PZN-added PZT film showed higher remanent polarization and dielectric constant values than pure PZT film when the films were coated on sapphire and annealed at 900°C. The ferroelectric and dielectric characteristics of 20 % PZN-added PZT films annealed at 900°C were compared with the result values obtained from bulk ceramic specimen with same composition sintered at 1200°C. As annealing temperature increased, dielectric constant increased. These came from enhanced crystallization and grain growth by post heat treatment.

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