Hexagonal shape Si crystal grown by mixed-source HVPE method (혼합소스 HVPE 방법에 의해 성장된 육각형 Si 결정)

Gang Seok Lee (이강석); Kyoung-Hwa Kim (김경화); Jung Hyun Park (박정현); KIM SO YOON (김소윤); Lee Ha Young (이하영); Hyung Soo Ahn (안형수); Jae Hak Lee (이재학); Young Tea Chun (전영태); Min Yang (양민); Sam Nyung Yi (이삼녕); InjunJeon (전인준); Cho, Chae-Ryong (조채용); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2021.31.3.103

Hexagonal shape Si crystal grown by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2021, 31(3), pp.103~111
DOI : 10.6111/JKCGCT.2021.31.3.103
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : May 17, 2021
Accepted : June 9, 2021
Published : June 30, 2021

Gang Seok Lee ¹, Kyoung-Hwa Kim ¹, Jung Hyun Park ¹, KIM SO YOON ¹, Lee Ha Young ¹, Hyung Soo Ahn ¹, Jae Hak Lee ¹, Young Tea Chun ¹, Min Yang ¹, Sam Nyung Yi ¹, InjunJeon ², Cho, Chae-Ryong ², Kim Suck Whan ³

¹한국해양대학교
²부산대학교
³안동대학교

Accredited

ABSTRACT

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method,nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200°C. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

KEYWORDS

Hexagonal Si, Cubic Si, Mixed-source HVPE, Si allotrope, Direct bandgap Si

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This paper was written with support from the National Research Foundation of Korea.

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