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@article{ART002833135},
author={leeseungjune and Yong-Jae Yoo and Seongmin Jeong and Si-Young Bae and Lee, Won Jae and SHIN Yunji},
title={Study on the characteristics of transition metals for TSSG process of SiC single crystal},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={2},
pages={55-60},
doi={10.6111/JKCGCT.2022.32.2.055}

TY - JOUR
AU - leeseungjune
AU - Yong-Jae Yoo
AU - Seongmin Jeong
AU - Si-Young Bae
AU - Lee, Won Jae
AU - SHIN Yunji
TI - Study on the characteristics of transition metals for TSSG process of SiC single crystal
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 55
EP - 60
SN - 1225-1429
AB - In this study, a heat treatment experiment was conducted to select a new melt composition that can easily control the unintentionally doped nitrogen (N-UID) without degrading the SiC single crystal quality during TSSG process. The experiment was carried out for about 2 hours at a temperature of 1900°C under Ar atmosphere. The used melt composition is based on either Si-Ti 10 at% or Si-Cr 30 at%, and also Co or Sc transition metals, which are effective for carbon solubility, were added at 3 at%, respectively. After the experiment, the crucible was cross-sectionally cut, and evaluated the Si-C reaction layer on the crucible-melt interface. As a result, with Sc addition, Si-C reaction layers uniformly occurred with a Si-infiltrated layer (~550 µm) and a SiC interlayer (~23 µm). This result represented that the addition of Sc is an effective transition metal with high carbon solubility and can feed carbon sources into the melt homogeneously. In addition, Sc is well known to have low reactivity energy with nitrogen compared to other transition metals. Therefore, we expect that both growth rate and Nitrogen UID can be controlled by Si-Sc based melt in the TSSG process.
KW - Silicon Carbide;TSSG;Transition metal;Nitrogen doping;C solubility;Si-C reaction
DO - 10.6111/JKCGCT.2022.32.2.055
ER -

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae and SHIN Yunji. (2022). Study on the characteristics of transition metals for TSSG process of SiC single crystal. Journal of the Korean Crystal Growth and Crystal Technology, 32(2), 55-60.

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae and SHIN Yunji. 2022, "Study on the characteristics of transition metals for TSSG process of SiC single crystal", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.2 pp.55-60. Available from: doi:10.6111/JKCGCT.2022.32.2.055

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae, SHIN Yunji "Study on the characteristics of transition metals for TSSG process of SiC single crystal" Journal of the Korean Crystal Growth and Crystal Technology 32.2 pp.55-60 (2022) : 55.

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae, SHIN Yunji. Study on the characteristics of transition metals for TSSG process of SiC single crystal. 2022; 32(2), 55-60. Available from: doi:10.6111/JKCGCT.2022.32.2.055

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae and SHIN Yunji. "Study on the characteristics of transition metals for TSSG process of SiC single crystal" Journal of the Korean Crystal Growth and Crystal Technology 32, no.2 (2022) : 55-60.doi: 10.6111/JKCGCT.2022.32.2.055

leeseungjune; Yong-Jae Yoo; Seongmin Jeong; Si-Young Bae; Lee, Won Jae; SHIN Yunji. Study on the characteristics of transition metals for TSSG process of SiC single crystal. Journal of the Korean Crystal Growth and Crystal Technology, 32(2), 55-60. doi: 10.6111/JKCGCT.2022.32.2.055

leeseungjune; Yong-Jae Yoo; Seongmin Jeong; Si-Young Bae; Lee, Won Jae; SHIN Yunji. Study on the characteristics of transition metals for TSSG process of SiC single crystal. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(2) 55-60. doi: 10.6111/JKCGCT.2022.32.2.055

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae, SHIN Yunji. Study on the characteristics of transition metals for TSSG process of SiC single crystal. 2022; 32(2), 55-60. Available from: doi:10.6111/JKCGCT.2022.32.2.055

leeseungjune, Yong-Jae Yoo, Seongmin Jeong, Si-Young Bae, Lee, Won Jae and SHIN Yunji. "Study on the characteristics of transition metals for TSSG process of SiC single crystal" Journal of the Korean Crystal Growth and Crystal Technology 32, no.2 (2022) : 55-60.doi: 10.6111/JKCGCT.2022.32.2.055