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@article{ART002849573},
author={Seung Hoon Lee and Joo Hyung Lee and Oh Nuri and Sung Yi and Hyung Bin Park and Ran Hee Shin and Jae Hwa Park},
title={Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2022},
volume={32},
number={3},
pages={83-88},
doi={10.6111/JKCGCT.2022.32.3.083}

TY - JOUR
AU - Seung Hoon Lee
AU - Joo Hyung Lee
AU - Oh Nuri
AU - Sung Yi
AU - Hyung Bin Park
AU - Ran Hee Shin
AU - Jae Hwa Park
TI - Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2022
VL - 32
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 83
EP - 88
SN - 1225-1429
AB - To improve the crystallinity of GaN, there are researches on surface treatment to control the difference inphysical properties between GaN and heterogeneous substrate. ‘Low-temperature GaN (LT-GaN)’ is one of the ways tosolve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in ourhomemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures andthey presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stressrelaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the highcrystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed ofpolycrystalline.
KW - Low temperature GaN;Residual stress;Nuclei density;HVPE
DO - 10.6111/JKCGCT.2022.32.3.083
ER -

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin and Jae Hwa Park. (2022). Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN. Journal of the Korean Crystal Growth and Crystal Technology, 32(3), 83-88.

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin and Jae Hwa Park. 2022, "Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN", Journal of the Korean Crystal Growth and Crystal Technology, vol.32, no.3 pp.83-88. Available from: doi:10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin, Jae Hwa Park "Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN" Journal of the Korean Crystal Growth and Crystal Technology 32.3 pp.83-88 (2022) : 83.

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin, Jae Hwa Park. Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN. 2022; 32(3), 83-88. Available from: doi:10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin and Jae Hwa Park. "Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN" Journal of the Korean Crystal Growth and Crystal Technology 32, no.3 (2022) : 83-88.doi: 10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee; Joo Hyung Lee; Oh Nuri; Sung Yi; Hyung Bin Park; Ran Hee Shin; Jae Hwa Park. Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN. Journal of the Korean Crystal Growth and Crystal Technology, 32(3), 83-88. doi: 10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee; Joo Hyung Lee; Oh Nuri; Sung Yi; Hyung Bin Park; Ran Hee Shin; Jae Hwa Park. Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN. Journal of the Korean Crystal Growth and Crystal Technology. 2022; 32(3) 83-88. doi: 10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin, Jae Hwa Park. Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN. 2022; 32(3), 83-88. Available from: doi:10.6111/JKCGCT.2022.32.3.083

Seung Hoon Lee, Joo Hyung Lee, Oh Nuri, Sung Yi, Hyung Bin Park, Ran Hee Shin and Jae Hwa Park. "Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN" Journal of the Korean Crystal Growth and Crystal Technology 32, no.3 (2022) : 83-88.doi: 10.6111/JKCGCT.2022.32.3.083