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Effect of sintering temperature on microstructure and dielectric properties in (Dy, Mg)-doped BaTiO₃

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2022, 32(5), pp.175-182
  • DOI : 10.6111/JKCGCT.2022.32.5.175
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : August 25, 2022
  • Accepted : September 14, 2022
  • Published : October 31, 2022

Jong-Won Woo 1 Sung-Hyun Kim 1 Moonhee Choi 2 Sang-Chae Jeon 1

1창원대학교
2한국세라믹기술원

Accredited

ABSTRACT

Rare-earth elements were doped with Mg to enhance the temperature stability of dielectric properties of BaTiO₃ for its application to MLCC (Multi-Layer Ceramic Capacitor). The additives strongly affect both grain growth and densification behaviors during sintering, and hence dielectric properties. The additive effects therefore should be examined in each system with different additives. This study investigated the crystal structure, grain growth and densificationbehaviors and related variations in dielectric constant with respect to sintering temperature. Dielectric constant appears to be varied with grain size in a temperature range between 1200 and 1300°C, suggesting the importance of grain size control. The temperature dependence of grain size variation was well explained by an established theory correlating the grain growth behavior with grain boundary structure. This accordance provides a basis for sintering technique to control grain growth thus to improve dielectric constant in rare-earth doped BaTiO₃.

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