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4H-SiC bulk single crystal growth using recycled powder

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2022, 32(5), pp.169-174
  • DOI : 10.6111/JKCGCT.2022.32.5.169
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : August 16, 2022
  • Accepted : September 26, 2022
  • Published : October 31, 2022

Im Gyu Yeo 1 Jae Yoon Lee 1 Myong Chuel Chun 1

1(재)포항산업과학연구원

Accredited

ABSTRACT

This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment,the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without poly type inclusion. In the case of micro-pipe density was 0.02 ea/cm² and resistivity characteristics was 0.015~0.020 ohm·cm², commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.

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