@article{ART003053530},
author={Kang, Seung-Min and Gyong-Phil Yin},
title={A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={1},
pages={36-39},
doi={10.6111/JKCGCT.2024.34.1.036}
TY - JOUR
AU - Kang, Seung-Min
AU - Gyong-Phil Yin
TI - A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 36
EP - 39
SN - 1225-1429
AB - As interest in power semiconductors is growing recently, research on device design and application using light energy gap materials such as SiC and GaN is being actively conducted. Because AlN single crystals have a larger energy gap than the above mentioned materials, research on high-power devices is also in progress, but commercialized wafers have not yet been reported, so research is needed. In this study, we applied the HVPE (Hydride vapor phase epitaxy) method to produce AlN single crystals and attempted to obtain bulk single crystals using our own manufacturingequipment. To this end, we would like to report the results of securing the growth conditions for single crystals. we would like to report on the change in the shape of the grown crystal according to the change in temperature.
KW - HVPE;AlN;Single crystal;Growth;Temperature change
DO - 10.6111/JKCGCT.2024.34.1.036
ER -
Kang, Seung-Min and Gyong-Phil Yin. (2024). A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method. Journal of the Korean Crystal Growth and Crystal Technology, 34(1), 36-39.
Kang, Seung-Min and Gyong-Phil Yin. 2024, "A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.1 pp.36-39. Available from: doi:10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min, Gyong-Phil Yin "A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method" Journal of the Korean Crystal Growth and Crystal Technology 34.1 pp.36-39 (2024) : 36.
Kang, Seung-Min, Gyong-Phil Yin. A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method. 2024; 34(1), 36-39. Available from: doi:10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min and Gyong-Phil Yin. "A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method" Journal of the Korean Crystal Growth and Crystal Technology 34, no.1 (2024) : 36-39.doi: 10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min; Gyong-Phil Yin. A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method. Journal of the Korean Crystal Growth and Crystal Technology, 34(1), 36-39. doi: 10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min; Gyong-Phil Yin. A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(1) 36-39. doi: 10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min, Gyong-Phil Yin. A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method. 2024; 34(1), 36-39. Available from: doi:10.6111/JKCGCT.2024.34.1.036
Kang, Seung-Min and Gyong-Phil Yin. "A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method" Journal of the Korean Crystal Growth and Crystal Technology 34, no.1 (2024) : 36-39.doi: 10.6111/JKCGCT.2024.34.1.036