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A study on the growth morphology of AlN single crystal according to the change in temperature using HVPE method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2024, 34(1), pp.36-39
  • DOI : 10.6111/JKCGCT.2024.34.1.036
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : February 6, 2024
  • Accepted : February 16, 2024
  • Published : February 29, 2024

Kang, Seung-Min 1 Gyong-Phil Yin 2

1한서대학교
2(주)세라컴

Accredited

ABSTRACT

As interest in power semiconductors is growing recently, research on device design and application using light energy gap materials such as SiC and GaN is being actively conducted. Because AlN single crystals have a larger energy gap than the above mentioned materials, research on high-power devices is also in progress, but commercialized wafers have not yet been reported, so research is needed. In this study, we applied the HVPE (Hydride vapor phase epitaxy) method to produce AlN single crystals and attempted to obtain bulk single crystals using our own manufacturingequipment. To this end, we would like to report the results of securing the growth conditions for single crystals. we would like to report on the change in the shape of the grown crystal according to the change in temperature.

Citation status

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