@article{ART003109114},
author={Min-Ji Chae and Sun-Yeong Seo and Hui-Yeon Jang and So-Min Shin and Dae-Uk Kim and Kim yunjin and Mi-Seon Park and Gwang-Hee Jung and Jin-Ki Kang and Hae Yong Lee and Lee, Won Jae},
title={Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={4},
pages={109-116},
doi={10.6111/JKCGCT.2024.34.4.109}
TY - JOUR
AU - Min-Ji Chae
AU - Sun-Yeong Seo
AU - Hui-Yeon Jang
AU - So-Min Shin
AU - Dae-Uk Kim
AU - Kim yunjin
AU - Mi-Seon Park
AU - Gwang-Hee Jung
AU - Jin-Ki Kang
AU - Hae Yong Lee
AU - Lee, Won Jae
TI - Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 109
EP - 116
SN - 1225-1429
AB - β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower roduction cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, 201) and off-angles (1°, 3°, 4°), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE(Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.
KW - β-Ga₂O₃;Edge-defined film-fed growth;Off-angle;Properties analysis;Halide vapor phase epitaxy (HVPE);Homoepitaxial layer
DO - 10.6111/JKCGCT.2024.34.4.109
ER -
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee and Lee, Won Jae. (2024). Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle. Journal of the Korean Crystal Growth and Crystal Technology, 34(4), 109-116.
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee and Lee, Won Jae. 2024, "Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.4 pp.109-116. Available from: doi:10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee, Lee, Won Jae "Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle" Journal of the Korean Crystal Growth and Crystal Technology 34.4 pp.109-116 (2024) : 109.
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee, Lee, Won Jae. Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle. 2024; 34(4), 109-116. Available from: doi:10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee and Lee, Won Jae. "Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle" Journal of the Korean Crystal Growth and Crystal Technology 34, no.4 (2024) : 109-116.doi: 10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae; Sun-Yeong Seo; Hui-Yeon Jang; So-Min Shin; Dae-Uk Kim; Kim yunjin; Mi-Seon Park; Gwang-Hee Jung; Jin-Ki Kang; Hae Yong Lee; Lee, Won Jae. Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle. Journal of the Korean Crystal Growth and Crystal Technology, 34(4), 109-116. doi: 10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae; Sun-Yeong Seo; Hui-Yeon Jang; So-Min Shin; Dae-Uk Kim; Kim yunjin; Mi-Seon Park; Gwang-Hee Jung; Jin-Ki Kang; Hae Yong Lee; Lee, Won Jae. Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(4) 109-116. doi: 10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee, Lee, Won Jae. Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle. 2024; 34(4), 109-116. Available from: doi:10.6111/JKCGCT.2024.34.4.109
Min-Ji Chae, Sun-Yeong Seo, Hui-Yeon Jang, So-Min Shin, Dae-Uk Kim, Kim yunjin, Mi-Seon Park, Gwang-Hee Jung, Jin-Ki Kang, Hae Yong Lee and Lee, Won Jae. "Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle" Journal of the Korean Crystal Growth and Crystal Technology 34, no.4 (2024) : 109-116.doi: 10.6111/JKCGCT.2024.34.4.109
