Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle (EFG 법으로 성장시킨 β-Ga₂O₃ 단결정의 다양한 결정면, off-angle에 따른 epitaxial layer의 특성 분석)

Min-Ji Chae (채민지); Sun-Yeong Seo (서선영); Hui-Yeon Jang (장희연); So-Min Shin (신소민); Dae-Uk Kim (김대욱); Kim yunjin (김윤진); Mi-Seon Park (박미선); Kwang-Hee  Jung (정광희); Jin-Ki Kang (강진기); Hae Yong Lee (이혜용); Lee Won Jae (이원재)

doi:10.6111/JKCGCT.2024.34.4.109

Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2024, 34(4), pp.109~116
DOI : 10.6111/JKCGCT.2024.34.4.109
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : July 11, 2024
Accepted : July 26, 2024
Published : August 31, 2024

Min-Ji Chae ¹, Sun-Yeong Seo ¹, Hui-Yeon Jang ¹, So-Min Shin ¹, Dae-Uk Kim ¹, Kim yunjin ¹, Mi-Seon Park ¹, Kwang-Hee Jung ¹, Jin-Ki Kang ², Hae Yong Lee ³, Lee Won Jae ¹

¹동의대학교
²(주)악셀
³(주)루미지엔테크

Accredited

ABSTRACT

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower roduction cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, 201) and off-angles (1°, 3°, 4°), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE(Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

KEYWORDS

β-Ga₂O₃, Edge-defined film-fed growth, Off-angle, Properties analysis, Halide vapor phase epitaxy (HVPE), Homoepitaxial layer

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle

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This is the result of checking the information with the same ISSN, publication year, volume, and start page between the WoS and the KCI journals. (as of 2026-07-09)

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle

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