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Plasma resistance of Bi-Al-Si-O and Bi-Al-Si-O-F glass coating film

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2024, 34(4), pp.131-138
  • DOI : 10.6111/JKCGCT.2024.34.4.131
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : August 12, 2024
  • Accepted : August 19, 2024
  • Published : August 31, 2024

Sung Hyun Woo 1 JiHoon Jung 1 JUNG HEON LEE 1 Kim Hyeong Jun 2

1성균관대학교
2한국세라믹기술원

Accredited

ABSTRACT

In this study, the microstructure and plasma resistance characteristics of 35Bi₂O₃-15Al₂O₃-50SiO₂ (BiAlSiO) and 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃ (BiAlSiOF) glass layers coated on sintered alumina substrates were investigated according to the sintering conditions. The coated layers were formed using the bar coating method and then sintered at a temperature in the range of 700~900°C, which corresponds to the temperature before and after the hemisphere forming temperature, after a debinding process. The plasma resistance of the two coated glasses was approximately 2~3 times higher than that of the quartz glass, and in particular, the BiAlSiOF glass film with F added showed higher plasma resistance than BiAlSiO. It is thought to be due to the effect of suppressing the reaction with fluorine gas by adding fluorine to the glass. When the sintering time was increased at 700°C and 800°C, the plasma resistance of both glasses improved, but when the sintering temperature was increased to 900oC, the plasma resistance decreased again (i.e., the etching rate increased). This phenomenon is thought to be related to the crystallization behavior of both glasses. The change in plasma resistance depending on the sintering conditions is thought to be related to the appearance of Al and Bi-rich phases.

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