@article{ART003109118},
author={Kang, Seung-Min},
title={A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2024},
volume={34},
number={4},
pages={139-142},
doi={10.6111/JKCGCT.2024.34.4.139}
TY - JOUR
AU - Kang, Seung-Min
TI - A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2024
VL - 34
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 139
EP - 142
SN - 1225-1429
AB - Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.
KW - HVPE;Sapphire wafer;AlN;Single crystal;Growth behavior
DO - 10.6111/JKCGCT.2024.34.4.139
ER -
Kang, Seung-Min. (2024). A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 34(4), 139-142.
Kang, Seung-Min. 2024, "A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy", Journal of the Korean Crystal Growth and Crystal Technology, vol.34, no.4 pp.139-142. Available from: doi:10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min "A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 34.4 pp.139-142 (2024) : 139.
Kang, Seung-Min. A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy. 2024; 34(4), 139-142. Available from: doi:10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min. "A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 34, no.4 (2024) : 139-142.doi: 10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min. A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology, 34(4), 139-142. doi: 10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min. A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy. Journal of the Korean Crystal Growth and Crystal Technology. 2024; 34(4) 139-142. doi: 10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min. A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy. 2024; 34(4), 139-142. Available from: doi:10.6111/JKCGCT.2024.34.4.139
Kang, Seung-Min. "A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy" Journal of the Korean Crystal Growth and Crystal Technology 34, no.4 (2024) : 139-142.doi: 10.6111/JKCGCT.2024.34.4.139
