@article{ART003246194},
author={Na-Kyeong Kim and Gyeong-Jun Song and Dae-Uk Kim and Chan-Ho Park and Mi-Seon Park and Kwang-Hee Jung and Jung-Gon Kim and Lee, Won Jae},
title={Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2025},
volume={35},
number={3},
pages={95-100},
doi={10.6111/JKCGCT.2025.35.3.095}
TY - JOUR
AU - Na-Kyeong Kim
AU - Gyeong-Jun Song
AU - Dae-Uk Kim
AU - Chan-Ho Park
AU - Mi-Seon Park
AU - Kwang-Hee Jung
AU - Jung-Gon Kim
AU - Lee, Won Jae
TI - Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2025
VL - 35
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 95
EP - 100
SN - 1225-1429
AB - The optimization of growth conditions, hot zone design, and insulation structure is crucial for high-quality SiC single crystal growth using Physical Vapor Transport (PVT) techniques. Inadequate growth design can lead to polytype inclusions, crack formation, and increased defect density within the crystal, ultimately deteriorating the quality of the final SiC single crystal. In this study, a new insulation design was developed to enhance the axial and radial temperature gradients at the top of the crucible compared to the conventional graphite insulation structure. Additionally, nitrogen gas was employed during the growth process to ensure polytype stability. Simulations using VR reactor software were conducted to analyze the internal temperature distribution within the crucible and the migration pathways of SiC source chemical species resulting from the enhanced upper insulation. Ingots grown using each design achieved growth rates in the mid-100 µm/hr range. In crystals grown with the conventional Design A, polytype inclusions and cracking were observed throughout the ingot. In contrast, crystals grown with Designs B and C showed significant suppression of polycrystalline formation at the ingot periphery and markedly improved crystallinity. Notably, the application of Design C, which featured enhanced upper crucible insulation and nitrogen gas employed during the growth process, resulted in high-quality 4H-SiC crystals.
KW - SiC;Polytype;Physical vapor transport;Graphite insulation;Nitrogen doping;Crystal quality
DO - 10.6111/JKCGCT.2025.35.3.095
ER -
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. (2025). Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping. Journal of the Korean Crystal Growth and Crystal Technology, 35(3), 95-100.
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. 2025, "Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping", Journal of the Korean Crystal Growth and Crystal Technology, vol.35, no.3 pp.95-100. Available from: doi:10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae "Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping" Journal of the Korean Crystal Growth and Crystal Technology 35.3 pp.95-100 (2025) : 95.
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping. 2025; 35(3), 95-100. Available from: doi:10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping" Journal of the Korean Crystal Growth and Crystal Technology 35, no.3 (2025) : 95-100.doi: 10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim; Gyeong-Jun Song; Dae-Uk Kim; Chan-Ho Park; Mi-Seon Park; Kwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping. Journal of the Korean Crystal Growth and Crystal Technology, 35(3), 95-100. doi: 10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim; Gyeong-Jun Song; Dae-Uk Kim; Chan-Ho Park; Mi-Seon Park; Kwang-Hee Jung; Jung-Gon Kim; Lee, Won Jae. Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping. Journal of the Korean Crystal Growth and Crystal Technology. 2025; 35(3) 95-100. doi: 10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim, Lee, Won Jae. Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping. 2025; 35(3), 95-100. Available from: doi:10.6111/JKCGCT.2025.35.3.095
Na-Kyeong Kim, Gyeong-Jun Song, Dae-Uk Kim, Chan-Ho Park, Mi-Seon Park, Kwang-Hee Jung, Jung-Gon Kim and Lee, Won Jae. "Polytype stabilization and crystal quality improvement in SiC crystal growth through graphite insulation optimization and nitrogen doping" Journal of the Korean Crystal Growth and Crystal Technology 35, no.3 (2025) : 95-100.doi: 10.6111/JKCGCT.2025.35.3.095
