@article{ART003246195},
author={Kang, Seung-Min},
title={A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2025},
volume={35},
number={3},
pages={101-104},
doi={10.6111/JKCGCT.2025.35.3.101}
TY - JOUR
AU - Kang, Seung-Min
TI - A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2025
VL - 35
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 101
EP - 104
SN - 1225-1429
AB - In order to grow AlN single crystals, HVPE (hydride vapor phase epitaxy) method was used and the sapphire substrates were adapted to the seed for the growth of single crystal AlN. The nitrogen gas, the carrier gas, was used to supply the HCl gas and NH3 and to keep the flow in the reactor. This redearch was carried out in order to evaluate the growth behavior of AlN crystal growth due to the change of the V/III gas ratio. By fixing the amount of nitrogen carrier gas, which is supplied during growth, there was a change in the grown crystal phase depending on the change in the supply ratio of nitrogen (N) and aluminum (Al). The grown AlN thick films had the variation result along the change of the V/III gas ratio. The growth behavior of AlN crystal was characterized by observation using an optical microscope and SEM, and the results are discussed and reported.
KW - AlN;Single crystal growth;Thick layer;HVPE;N/Al ratio
DO - 10.6111/JKCGCT.2025.35.3.101
ER -
Kang, Seung-Min. (2025). A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method. Journal of the Korean Crystal Growth and Crystal Technology, 35(3), 101-104.
Kang, Seung-Min. 2025, "A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method", Journal of the Korean Crystal Growth and Crystal Technology, vol.35, no.3 pp.101-104. Available from: doi:10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min "A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method" Journal of the Korean Crystal Growth and Crystal Technology 35.3 pp.101-104 (2025) : 101.
Kang, Seung-Min. A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method. 2025; 35(3), 101-104. Available from: doi:10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min. "A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method" Journal of the Korean Crystal Growth and Crystal Technology 35, no.3 (2025) : 101-104.doi: 10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min. A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method. Journal of the Korean Crystal Growth and Crystal Technology, 35(3), 101-104. doi: 10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min. A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method. Journal of the Korean Crystal Growth and Crystal Technology. 2025; 35(3) 101-104. doi: 10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min. A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method. 2025; 35(3), 101-104. Available from: doi:10.6111/JKCGCT.2025.35.3.101
Kang, Seung-Min. "A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method" Journal of the Korean Crystal Growth and Crystal Technology 35, no.3 (2025) : 101-104.doi: 10.6111/JKCGCT.2025.35.3.101
