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Studies on correlations of crystal growth and Nusselt/Sherwood number during physical vapor transport of Hg₂Cl₂

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2025, 35(4), pp.131~138
  • DOI : 10.6111/JKCGCT.2025.35.4.131
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : November 3, 2025
  • Accepted : November 5, 2025
  • Published : December 31, 2025

Geug Tae Kim 1 Jung-Kyu Park 2

1한남대학교
2한국지질자원연구원

Accredited

ABSTRACT

This paper presents a numerical simulation of double diffusive convection in a rectangular enclousre during physical vapor transport of Hg₂Cl₂. The flow characteristics are numerically investigated as a function of the partial pressure of Br₂ at 10 Torr and 200 Torr at a temperature difference of 10°C (290°C→280°C) between the source and crystal regions, and the velocity vectors, streamlines, isotherms, and isomass concentration contours are presented. In addition, both the average Nusselt number and the average Sherwood number decrease linearly and exponentially, respectively, with increasing a partial pressure of Br₂. For pressures of Br₂ for 10 Torr and 200 Torr, the average Nusselt number in the crystal region is larger than in the crystal region, and conversely, the average Sherwood number in the crystal region is three times larger than in the source region.

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