@article{ART002964081},
author={Wang Weihua and Yang Shilin and Liu Benjian and Hao Xiaobin and Han Jiecai and Dai Bing and Zhu Jiaqi},
title={Bias process for heteroepitaxial diamond nucleation on Ir substrates},
journal={Carbon Letters},
issn={1976-4251},
year={2023},
volume={33},
number={2},
pages={517-530},
doi={10.1007/s42823-022-00441-8}
TY - JOUR
AU - Wang Weihua
AU - Yang Shilin
AU - Liu Benjian
AU - Hao Xiaobin
AU - Han Jiecai
AU - Dai Bing
AU - Zhu Jiaqi
TI - Bias process for heteroepitaxial diamond nucleation on Ir substrates
JO - Carbon Letters
PY - 2023
VL - 33
IS - 2
PB - Korean Carbon Society
SP - 517
EP - 530
SN - 1976-4251
AB - Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with increasing bias time, the diamond-nucleation pathway is found to transform from “isolated-crystal nucleation” to “typical domain-nucleation” and back to “isolated-crystal nucleation.” An interdependent relationship between bias voltage and bias time is proposed: the higher the bias voltage, the shorter the bias time. Second, a correlation exists between the threshold bias voltage and reactor-chamber pressure: a higher reactor chamber pressure usually requires a higher threshold bias voltage to realize “typical domain nucleation.” Third, diamond bias-enhanced nucleation and growth is observed at a high CH4 content, where the dynamic equilibrium between amorphous-carbon-layer deposition and atomic-hydrogen etching is broken. Finally, epitaxial nucleation is obtained on a substrate with ∅30 mm in a home-made MPCVD setup.
KW - Diamond film Heteroepitaxy Single-crystal growth Nucleation Chemical vapor deposition
DO - 10.1007/s42823-022-00441-8
ER -
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing and Zhu Jiaqi. (2023). Bias process for heteroepitaxial diamond nucleation on Ir substrates. Carbon Letters, 33(2), 517-530.
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing and Zhu Jiaqi. 2023, "Bias process for heteroepitaxial diamond nucleation on Ir substrates", Carbon Letters, vol.33, no.2 pp.517-530. Available from: doi:10.1007/s42823-022-00441-8
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing, Zhu Jiaqi "Bias process for heteroepitaxial diamond nucleation on Ir substrates" Carbon Letters 33.2 pp.517-530 (2023) : 517.
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing, Zhu Jiaqi. Bias process for heteroepitaxial diamond nucleation on Ir substrates. 2023; 33(2), 517-530. Available from: doi:10.1007/s42823-022-00441-8
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing and Zhu Jiaqi. "Bias process for heteroepitaxial diamond nucleation on Ir substrates" Carbon Letters 33, no.2 (2023) : 517-530.doi: 10.1007/s42823-022-00441-8
Wang Weihua; Yang Shilin; Liu Benjian; Hao Xiaobin; Han Jiecai; Dai Bing; Zhu Jiaqi. Bias process for heteroepitaxial diamond nucleation on Ir substrates. Carbon Letters, 33(2), 517-530. doi: 10.1007/s42823-022-00441-8
Wang Weihua; Yang Shilin; Liu Benjian; Hao Xiaobin; Han Jiecai; Dai Bing; Zhu Jiaqi. Bias process for heteroepitaxial diamond nucleation on Ir substrates. Carbon Letters. 2023; 33(2) 517-530. doi: 10.1007/s42823-022-00441-8
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing, Zhu Jiaqi. Bias process for heteroepitaxial diamond nucleation on Ir substrates. 2023; 33(2), 517-530. Available from: doi:10.1007/s42823-022-00441-8
Wang Weihua, Yang Shilin, Liu Benjian, Hao Xiaobin, Han Jiecai, Dai Bing and Zhu Jiaqi. "Bias process for heteroepitaxial diamond nucleation on Ir substrates" Carbon Letters 33, no.2 (2023) : 517-530.doi: 10.1007/s42823-022-00441-8
